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Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

Published online by Cambridge University Press:  15 February 2011

M. L. Hussein ,
W. Q. Ma  and
G.J. Salamo
M. L. Hussein
Affiliation:
Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701
W. Q. Ma
Affiliation:
Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701
G.J. Salamo
Affiliation:
Microelectronics-Photonics, University of Arkansas, Fayetteville, Arkansas 72701
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Abstract

Multiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 776: Symposium Q – Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing , 2003 , Q11.29
Copyright
Copyright © Materials Research Society 2003

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