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Accelerated Oxidation of Hydrogen Silsesquioxane Thin Films Facilitated by an Organosilicone Resin Additive

Published online by Cambridge University Press:  01 February 2011

Brian R. Harkness ,
Ron Boisvert ,
Qian Deng ,
Ben Zhong ,
Jianing Sun  and
David Gidley
Brian R. Harkness
Affiliation:
Dow Corning Corporation 2200 W. Salzburg Road, Midland, MI 48686, U.S.A
Ron Boisvert
Affiliation:
Dow Corning Corporation 2200 W. Salzburg Road, Midland, MI 48686, U.S.A
Qian Deng
Affiliation:
Dow Corning Corporation 2200 W. Salzburg Road, Midland, MI 48686, U.S.A
Ben Zhong
Affiliation:
Dow Corning Corporation 2200 W. Salzburg Road, Midland, MI 48686, U.S.A
Jianing Sun
Affiliation:
Department of Physics University of Michigan, Ann Arbor, MI, 48109, U.S.A.
David Gidley
Affiliation:
Department of Physics University of Michigan, Ann Arbor, MI, 48109, U.S.A.
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Abstract

It has been discovered that the incorporation of small amounts of hydrogen silsesquioxaneco-octadecyl silsesquioxane resin into hydrogen silsesquioxane films results in a significant modification of the thermally processed thin film properties compared to standard hydrogen silsesquioxane (HSQ) films derived from FOx ® solutions. These modifications included a doubling of the modulus and significant reduction in the remaining silyl hydride level. Key to the change in properties was an accelerated oxidation of the film during a one-minute hot plate bake step under a partial oxygen atmosphere. A systematic examination of a series of 5 to 30 weight percent resin additive formulations showed improved mechanical properties at lower additive levels but these were neutralized at higher levels by increasing levels of nanoporosity. It is hypothesized that the enhanced oxidation effect is the result of increased oxygen diffusivity into the film facilitated by the hydrocarbon component of the resin additive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E6.4
Copyright
Copyright © Materials Research Society 2003

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