Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-18T23:36:54.428Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation of Gaas on Vicinal Si(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

R. Hull ,
A. Fischer-Colbrie ,
S. J. Rosner ,
S. M. Koch  and
J. S. Harris Jr
R. Hull
Affiliation:
Now at AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
A. Fischer-Colbrie
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
S. J. Rosner
Affiliation:
Also at Electrical Engineering Dept., Stanford University, Stanford, CA 94305
S. M. Koch
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford, CA 94305
J. S. Harris Jr
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford, CA 94305
Get access

Abstract

We investigate the nucleation of epitaxial GaAs grown on vicinal Si(100) surfaces by Molecular Beam Epitaxy. We find that the vicinal surface structure is highly sensitive to the surface cleaning process, and that in-situ desorption of a volatile surface oxide at 900°C appears to result in significant step mobility, resulting in the formation of low angle surface facets. Nucleation of GaAs then occurs on these facets, raising the possibilty of influencing the heteroepitaxial nucleation and growth processes by influencing the substrate surface “template” at the surface cleaning stage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 25
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Kroemer, H., Proc. Mat. Res. Soc. 67, (ed. Fan, J.C.C. and Poate, J.M.), p. 3.Google Scholar
(2) Rosner, S.J., Koch, S.M. and Harris, J.S. Jr, Appl. Phys. Lett. 49, 1764 (1986)Google Scholar
(3) Biegelsen, D.K., Ponce, F.A., Smith, A.J. and Tramontana, J.C., Proc. Mat. Res. Soc. 67, (ed. Fan, J.C.C. and Poate, J.M.), p. 45.Google Scholar
(4) Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 853 (1987)Google Scholar
(5) Ishizaka, A., Nakagawa, K. and Shiraki, Y., in “Proceedings of the 2nd International Conference on Molecular Beam Epitaxy and Related Clean Surface Techniques (Japan Society of Applied Physics, Tokyo, 1983) p. 183.Google Scholar
(6) S.M. Koch, S.J. Rosner, D. Schlom and J.S. Harris, Jr., Proc. Mat. Res. Soc. 67, edited by J.C.C. Fan and J.M. Poate (Materials Research Society, Pittsburgh, PA, 1986), p. 77.; Koch, S.M., Rosner, S.J., Hull, R., Yoffe, G.W. and Harris, J.S. Jr, J. Cryst. Growth 81, 205 (1987)Google Scholar
(7) Bringans, R.D., Uhrberg, R.I.G., Olmstead, M.A., Bachrach, R.Z. and Northrup, J.E., Phys. Rev. Lett. 55, 553 (1985)CrossRefGoogle Scholar
(8) Gibson, J.M., Phys. Rev. Lett. 53, 1859 (1984)Google Scholar
(9) Van der Merwe, J.H., J. Appl. Phys. 34, 123 (1962)Google Scholar
(10) Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974)Google Scholar
(11) People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)Google Scholar
(12) Bevk, J., Mannearts, J.P., Feldman, L.C., Davidson, B.A. and Ourmazd, A., Appl. Phys. Lett. 48, 56 (1986)Google Scholar
(13) Luryi, S. and Suhir, E., Appl. Phys. Lett. 49, 140 (1986)Google Scholar
(14) Hull, R., Rosner, S.J., Koch, S.M. and Harris, J.S. Jr, Appl. Phys. Lett. 49, 1714 (1986)Google Scholar
(15) Hull, R., Fischer-Colbrie, A., Rosner, S.J., Koch, S.M. and Harris, J.S. Jr, to be published in Proc. Mat. Res. Soc. 82 (ed. Siegel, R.W., Weertman, J.R. and Sinclair, R.)Google Scholar
(16) Ponce, F.A., Biegelsen, D.K., Tramontana, J.C. and Smith, A.J., Proc. 14th Int. Conf. on Defecets in Semiconductors, ed. H.J. von Bardeleben (Transtech Publications, Aedermannsdorf, Switzerland, 1986)Google Scholar