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Low-temperature Growth of Poly-Si and SiGe Thin Films by Reactive Thermal CVD and Fabrication of High Mobility TFTs over 50 cm2/Vs

Published online by Cambridge University Press:  01 February 2011

Jun-Ichi Hanna  and
Kousaku Shimizu
Jun-Ichi Hanna
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
Kousaku Shimizu
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
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Abstract

We have established a new thermal CVD technique, Reactive Thermal CVD, for polycrystalline silicon (poly-Si) and silicon germanium (poly-SiGe) thin films aiming at thin film transistors (TFTs) applications, in which a low substrate temperature of 450°C enables us to use glass substrates. This technique achieved high crystallinity at very early stage of the film growth, resulting no amorphous incubation layer on the substrate surface. We fabricated bottom and top gate n-and p-channel TFTs with these of 200 nm thick films on SiO2/Si wafers and glass substrates, respectively: the high field effect mobilities as high as 55 cm2/Vs and 25 cm2/Vs were achieved in the bottom-gate and top-gate TFTs, respectively. Here, we discuss the technical requirements in the low-temperature CVD technique for the large-area poly-Si thin films and how they can be achieved in the reactive thermal CVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A20.1
Copyright
Copyright © Materials Research Society 2003

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