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Combinatorial Studies for High Density Si and Ge Nanoparticle Arrays

Published online by Cambridge University Press:  01 February 2011

Scott K. Stanley  and
John G. Ekerdt
Scott K. Stanley
Affiliation:
stanley@che.utexas.edu, University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, Austin, TX, 78712, United States
John G. Ekerdt
Affiliation:
ekerdt@che.utexas.edu, University of Texas at Austin, Chemical Engineering, 1 University Station, C0400, Austin, TX, 78712, United States
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Abstract

A simple combinatorial approach for studying chemical and physical vapor deposition (CVD and PVD) nanoparticle growth is presented utilizing temperature and precursor flux gradients across sample surfaces. Large temperature gradients (450-700 °C) are induced covering the entire range of interest for most CVD and PVD processes. Precursor flux gradients may also be introduced simultaneously or separately using a tungsten cracking filament mounted on a translation arm. Theory and calibration experiments are explained and results from a study on Ge nanoparticle growth on HfO2 surfaces are presented and analyzed. This method drastically decreases experimental time required to investigate nanoparticle growth and identify optimum deposition conditions. Furthermore, this approach greatly facilitates preparation of library samples containing a wide range (several orders of magnitude) in variation of nanoparticle sizes, density, and composition for subsequent studies.

Keywords

nucleation & growthchemical vapor deposition (CVD) (deposition)combinatorial synthesis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 933: Symposium G – Science and Technology of Nonvolatile Memories , 2006 , 0933-G05-11
Copyright
Copyright © Materials Research Society 2006

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References

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