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Thermoelectric properties of sintered polycrystalline ZnIn2S4

Published online by Cambridge University Press:  31 January 2011

Won-Seon Seo ,
Riki Otsuka ,
Harumi Okuno ,
Mitsuru Ohta  and
Kunihito Koumoto
Won-Seon Seo
Affiliation:
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Riki Otsuka
Affiliation:
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Harumi Okuno
Affiliation:
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Mitsuru Ohta
Affiliation:
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Kunihito Koumoto
Affiliation:
Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Abstract

Ceramic compacts of spinel-type ZnIn2S4 and IIIa-ZnIn2S4 polytype with a layer structure were synthesized by the reaction-sintering of mixed powders of ZnS and In2S3 at 723 K and 1073 K in Ar (containing 1° H2) atmosphere, respectively. The thermoelectric properties were investigated in the temperature range from 473 to 873 K. Thermoelectric figure of merit of the IIIa type was much larger than that of the spinel type, and it was slightly higher than the figure of merit of (ZnO)9In2O3, which is known to show the largest value among the oxide homologous compounds. To improve the thermoelectric properties, a c-plane-oriented sintered body of the IIIa polytype was successfully fabricated by a usual ceramic process. The figure of merit in the direction on the c plane was larger than on the ab plane due to higher electrical conductivity on the c plane and increased with increasing temperature showing the largest value of 1.3 × 10−4 K−1 at 873 K.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4176 - 4181
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Mora, S., Paorici, C., and Romeo, N., J. Appl. Phys. 42, 2061 (1971).CrossRefGoogle Scholar
2.Romeo, N., Dallaturca, A., Braglia, R., and Sberveglieri, G., Appl. Phys. Lett. 22, 21 (1973).CrossRefGoogle Scholar
3.Cingolani, A., Ferrara, M., Minafra, A., Adduci, F., and Tantalo, P., Phys. Status Solidi A 23, 367 (1974).CrossRefGoogle Scholar
4.Grilli, E. and Guzzi, M., Phys. Status Solidi A 40, 69 (1977).CrossRefGoogle Scholar
5.Zhitar, V.F., Moldovyan, N.A., and Radautsan, S.I., Sov. Phys. Semicond. 13, 1100 (1979).Google Scholar
6.Ohta, H., Seo, W.S., and Koumoto, K., J. Am. Ceram. Soc. 79, 2193 (1996).CrossRefGoogle Scholar
7.Kazeoka, M., Hiramatsu, H., Seo, W.S., and Koumoto, K., J. Mater. Res. 13, 523 (1998).CrossRefGoogle Scholar
8.Hiramatsu, H., Ohta, H., Seo, W.S., and Koumoto, K., J. Jpn. Soc. Powder and Powder Metall. 44, 44 (1997).CrossRefGoogle Scholar
9.Slack, G.A., in New Materials and Performance Limits for Thermoelectric Cooling, CRC Handbook of Thermoelectrics, edited by Rowe, D.M. (CRC Press, Boca Raton, FL, 1995), pp. 407–440.Google Scholar
10.Anagnostopoulos, A.N., Manolikas, C., Papadopoulos, D., and Spyridelis, J., Phys. Status Solidi A 72, 731 (1982).CrossRefGoogle Scholar
11.Anagnostopoulos, A.N., Manolikas, C., Papadopoulos, D., Phys. Status Solidi A 77, 595 (1983).CrossRefGoogle Scholar
12.Bianchetti, M., Herren, G., Lascalea, G., and Walsoe de Reca, N.E., Solid State Ionics 50, 115 (1992).CrossRefGoogle Scholar
13.Kalomiros, J.A., Anagnostopoulos, A.N., and Spyridelis, J., Semicond. Sci. Technol. 4, 563 (1989).CrossRefGoogle Scholar
14.Range, K.J., Becker, W., and Weiss, A., Z. Naturforsch., B: Chem. Sci. 24, 811 (1969).CrossRefGoogle Scholar
15.Berand, N. and Range, K.J., J. Alloys Compd. 205, 295 (1994).CrossRefGoogle Scholar
16.Berand, N. and Range, K.J., J. Alloys Compd. 241, 29 (1996).CrossRefGoogle Scholar
17.Baldassarre, L., Capozzi, V., Maggipinto, G., and Minafra, A., Phys. Status Solidi A 46, 589 (1978).CrossRefGoogle Scholar
18.Schmidlin, F.W., and Roberts, G.G., Phys. Rev. B: Solid State 9, 1578 (1974).CrossRefGoogle Scholar
19.Anagnostopoulos, A.N., Phys. Status Solidi A 75, 595 (1983).CrossRefGoogle Scholar
20.Frangis, N. and Manolikas, C., Phys. Status Solidi A 107, 589 (1988).CrossRefGoogle Scholar
21.Seo, W.S. and Koumoto, K. (unpublished).Google Scholar
22.Azaroff, L.V., and Brophy, J.J., in Electronic Processes in Materials (McGraw-Hill, New York, 1963), pp. 194–267.Google Scholar