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Role of the Substrate Doping in the Activation of Fe2+ centers in Fe implanted InP

Published online by Cambridge University Press:  01 February 2011

T. Cesca
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
A. Gasparotto
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
G. Mattei
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
A. Verna
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
B. Fraboni
Affiliation:
INFM and University of Bologna, Physics Dept., V.le Berti-Pichat 6/2, I-40137 Bologna, Italy.
G. Impellizzeri
Affiliation:
INFM and University of Catania, Physics and Astronomy Dept., Via S. Sofia 64, I-95123 Catania, Italy.
F. Priolo
Affiliation:
INFM and University of Catania, Physics and Astronomy Dept., Via S. Sofia 64, I-95123 Catania, Italy.
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Abstract

We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The lattice location of the Fe atoms and the effect of postimplantation annealing treatments have been studied by PIXE-channeling measurements. I-V, CV and DLTS analyses have been used to characterize the electrical properties related to the presence Fe2+/3+ deep traps. The results show that the background n-doping density play a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers. The same effect has been observed in samples containing Fe concentrations both above and below the Fe solubility threshold in InP.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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