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High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

Published online by Cambridge University Press:  10 February 2011

Q. Zhang ,
V. Madangarli ,
S. Soloviev  and
T. S. Sudarshan
Q. Zhang
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045Zhang@engr.sc.edu
V. Madangarli
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045Zhang@engr.sc.edu
S. Soloviev
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045Zhang@engr.sc.edu
T. S. Sudarshan
Affiliation:
Department of Electrical Engineering University of South Carolina, SC 29208, U.S.A Tel: 803–777–7302; Fax: 803–777–8045Zhang@engr.sc.edu
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Abstract

P-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 75
Copyright
Copyright © Materials Research Society 1999

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References

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