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Effect of Fabrication Variables on the Performance of Zinc Oxide Metal-Semiconductor-Metal Photodetectors

Published online by Cambridge University Press:  01 February 2011

Tingfang Yen ,
Dave Strome ,
Sung Jin Kim ,
Michael DiNezzaa ,
Alexander N. Cartwright  and
Wayne A. Anderson
Tingfang Yen
Affiliation:
tyen2@buffalo.edu, SUNY-Buffalo, Electrical Enginnering, 861 Robin Rd Apt#E, Amherst, NY, 14228, United States
Dave Strome
Affiliation:
dstrome@ambptech.com, AMBP Tech Corporation,, 201 Circle Drive North, Piscataway, NJ, 08854, United States
Sung Jin Kim
Affiliation:
sk264@buffalo.edu, State University of New York at Buffalo, Electrical Enginnering, 332 Bonner Hall, Buffalo, NY, 14260, United States
Michael DiNezzaa
Affiliation:
mdinezza@buffalo.edu, State University of New York at Buffalo, Electrical Enginnering, 332 Bonner Hall, Buffalo, NY, 14260, United States
Alexander N. Cartwright
Affiliation:
anc@eng.buffalo.edu, State University of New York at Buffalo, Electrical Enginnering, 332 Bonner Hall, Buffalo, NY, 14260, United States
Wayne A. Anderson
Affiliation:
waanders@acsu.buffalo.edu, State University of New York at Buffalo, Electrical Enginnering, 332 Bonner Hall, Buffalo, NY, 14260, United States
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Abstract

The performance of ZnO metal-semiconductor-metal (MSM) photodetectors can be significantly influenced by modifications in the fabrication process. ZnO thin films were deposited onto silicon substrates by radio frequency magnetron sputtering and later annealed by conventional furnace, rapid thermal anneal or laser anneal. The photoluminescence (PL) analysis revealed that laser annealing at 250 mW/cm2 increased the 370 nm peak from 520 to 1700 a.u. and reduced the defect peak from 380 to 20 a.u. MSM photodetectors were fabricated using an interdigitated and parallel pattern. Values of current responsivity ranged from about 0.025 A/W to above 430 A/W depending upon fabrication conditions and design.

Keywords

sputteringphotoconductivityZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L05-04
Copyright
Copyright © Materials Research Society 2008

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