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Properties of Nano-crystalline n-type Silicon Films Produced by Hot Wire Plasma Assisted Technique

Published online by Cambridge University Press:  17 March 2011

I. Ferreira ,
F. Braz Fernandes ,
P. Vilarinho ,
E. Fortunato  and
R. Martins
I. Ferreira
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal
F. Braz Fernandes
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal
P. Vilarinho
Affiliation:
Departamento de Cerâmica e do Vidro, UIMC, Universidade de Aveiro, 3810-193 Aveiro, Portugal
E. Fortunato
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal
R. Martins
Affiliation:
Departamento de Ciência dos Materiais, CENIMAT, Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa and CEMOP/UNINOVA, Quinta da Torre 2828-114 Caparica, Portugal
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Abstract

In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000°C and the rf power was varied from 0W to 200W while gas flow rate was varied from 15 to 100sccm keeping rf power at 50W. In this flow rate range, the growth rate of the films varied from 5Å/s to 250Å/s and the corresponding electrical room dark conductivity varied from 10−2 to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to 2cm2/V.s as rf power change from 0W to 200W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and [.proportional]Raman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A7.6
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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