Thin tungsten carbide films of different compositions were prepared by DC magnetron sputtering of tungsten and carbon and subsequent annealing in different environments. The onset of carbide formation was around 800°C. Annealing in a pure hydrogen ambient generally results in carbon depletion in the layers with the formation of a dominant W2C phase. Adding propane enhances the carbon content in the layers and stimulates the formation of the WC phase. On silicon nitride substrates, variation of the propane concentration in an annealing environment allows a continuous alteration of the layer structure between polycrystalline single phase WC and a mixed layer with dominant W2C and with it, the adjustment of different values of the electrical resistance. In contrast, on thin (100)SiC layers a textured W2C phase was grown after annealing in propane/hydrogen at 900°C whereas at higher temperatures the formation of silicides was observed. In addition, the chemical composition and the temperature dependence of the electrical specific resistance were investigated and are also discussed.