Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-16T19:07:24.906Z Has data issue: false hasContentIssue false

Multi-Via Electromigration Test Structures for Identification and Characterization of Different Failure Mechanisms

Published online by Cambridge University Press:  01 February 2011

Z.S. Choi
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
C. W. Chang
Affiliation:
Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576
J. H. Lee
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
C. L. Gan
Affiliation:
Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576 School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576
K. L. Pey
Affiliation:
Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576 School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
W. K. Choi
Affiliation:
Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore 117576 Department of Electrical and Computer Engineering, National University of Singapore, 4, Engineering Drive 3, Singapore 117576
Get access

Abstract

Experiments on three-terminal ‘dotted-I’ test structures (copper metal lines with vias at both ends and an additional via at the center) show that the mortality of a single segment not only depends on the values of its current density and length, but also on the stress conditions in the linked segment. The current density in one 25μm long segment was fixed at 0.5MA/cm2, with electron flow toward the central via. In the othersegment, the current magnitude and sign were varied for different test populations, with the current varied from 2.5MA/cm2 to -2.5MA/cm2 with intermediate values including zero. For all cases, some test structures survived for the full 780 hours of testing and some did not. The percent of the lines that failed increased monotonically with an effective jL product defined as the maximum of the sum of the jL products from all paths through the structure. However, some lines with smaller than expected effective jL products failed, and some lines with relatively large effective jL products did not. Simulations of electromigration and electromigration-induced failures for all test conditions have been carried out. We find that test conditions leading to extreme values of the effective jL product probe different failure mechanisms than those associated with intermediate effective jL products. It is also shown that the definition of the effective jL product must be modified to account for zero current (inactive) segments that act as reservoirs or sinks. Multi-via test structures in general, and dotted-I test structures specifically, are shown to be versatile tools for identification and characterization of different failure mechanisms and length effects through the use of different test conditions with a single fixed structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] International Technology Roadmap for Semiconductors, http://public.itrs.net.Google Scholar
[2] Hau-Riege, S.P. and Thompson, C.V., J. Mater. Res. 15, 1797 (2000).Google Scholar
[3] Lee, K.D., Ogawa, E.T., Yoon, S., Lu, X., and Ho, P.S., Appl. Phys. Letts. 82, 2032 (2003)Google Scholar
[4] Thompson, C.V., Gan, C.L., Alam, S.M., and Troxel, D.E., Proceedings of the International Interconnect Technology Conference, San Francisco, CA (2004).Google Scholar
[5] Blech, I.A. and Herring, C., Appl. Phys. Lett. 29, 131 (1976).Google Scholar
[6] Filippi, R.G., Wachnick, R. A., Aochi, H., Lloyd, J. R., and Korhonen, M. A., Appl. Phys. Lett. 69, 2350 (1996).Google Scholar
[7] Wang, P.C. and Filippi, R.G., Appl. Phys. Lett. 78, 3598 (2001).Google Scholar
[8] Lee, K.D., Ogawa, E.T., Matsuhashi, H., Justison, P.R., Ko, K.S. and Ho, P.S., Appl. Phys. Lett. 79, 3236 (2001).Google Scholar
[9] Hau-Riege, C.S., Marathe, A.P., Pham, V., Proc. of the Advanced Metallization Conf., 169 (2002).Google Scholar
[10] Hau-Riege, S.P., J. Appl. Phys. 91, 2014 (2002).Google Scholar
[11] Gan, C.L., Thompson, C.V., Pey, K.L, Choi, W.K., Tay, H.L. and Radhakrishnan, M.K., Appl. Phys. Letts. 79, 4592 (2001).Google Scholar
[12] Hau-Riege, S.P., Thompson, C.V., and Clement, J.J., IEEE Electr.Trans., 45, 2254 (1998).Google Scholar