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The Nd-nanocluster Coupling Strength and its Effect in Excitation/de-excitation of Nd3+ Luminescence in Nd-doped Silicon-rich Silicon Oxide

Published online by Cambridge University Press:  10 February 2011

Se-Young Seo  and
Jung H. Shin
Se-Young Seo
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1∼Kusung-dong, Yusung-gu, Taejon, Korea
Jung H. Shin
Affiliation:
Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1∼Kusung-dong, Yusung-gu, Taejon, Korea
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Abstract

The Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2 matrix, were prepared by electron-cyclotron-resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of SiH4 and O2 with co-sputtering of Nd and subsequent anneal at 950 °C. Efficient Nd3+ luminescence with moderate temperature quenching is observed. Based on the temperature dependence of Nd3+ luminescence lifetime, a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+ via quantum confined excitons while weak enough to result in a small back-transfer rate is identified as the key to Nd3+ luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I6.10
Copyright
Copyright © Materials Research Society 2003

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