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Stability of Nitrogen and Hydrogen in High-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

K.P. Bastos ,
R.P. Pezzi ,
L. Miotti ,
G.V. Soares ,
C. Driemeier ,
J. Morais  and
I.J.R. Baumvol
K.P. Bastos
Affiliation:
Instituto de Física - UFRGS, CP 15051 Porto Alegre 91501–970, Brazil
R.P. Pezzi
Affiliation:
Instituto de Física - UFRGS, CP 15051 Porto Alegre 91501–970, Brazil
L. Miotti
Affiliation:
Instituto de Física - UFRGS, CP 15051 Porto Alegre 91501–970, Brazil
G.V. Soares
Affiliation:
Instituto de Física - UFRGS, CP 15051 Porto Alegre 91501–970, Brazil
C. Driemeier
Affiliation:
Instituto de Física - UFRGS, CP 15051 Porto Alegre 91501–970, Brazil
J. Morais
Affiliation:
Instituto de Física - UFRGS, CP 15051 Porto Alegre 91501–970, Brazil
I.J.R. Baumvol
Affiliation:
Centro de Ciencias Exatas e Tecnologicas - UCS, Av. Francisco G. Vargas 1130, 95070–560 Caxias do Sul, Brazil
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Abstract

We report here on atomic transport, thermal stability, and chemical evolution of HfSiO, HfSiN, and AlON films on Si(001), aiming at investigating the atomic scale behaviour of the involved chemical species, N and H in particular, when the films are submitted to usual thermal processing steps in inert and oxidizing atmospheres. The films were characterized by nuclear reaction analyses in resonant and non-resonant regions of the cross-section curves, X-ray photoelectron spectroscopy, and low energy ion scattering. The HfSiN/Si structure was shown to be more resistant to oxygen diffusion than HfSiO/Si, although the amounts of O incorporated in HfSiN/Si are larger than in HfSiO/Si. The main channel of oxygen incorporation is atomic exchange with nitrogen or oxygen atoms. HfSiN film on Si incorporate more hydrogen (or deuterium) and in more stable configurations than HfSiO/Si. Nitrogen incorporation into AlON films on Si renders this structure more stable against thermal annealing in vacuum and/or oxidizing atmospheres than Al2O3/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E2.4
Copyright
Copyright © Materials Research Society 2004

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References

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