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The Entropy of Defects and Diffusion in Silicon

Published online by Cambridge University Press:  28 February 2011

Y. Bar-Yam  and
J. D. Joannopoulos
Y. Bar-Yam
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. D. Joannopoulos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Theoretical calculations of the finite temperature properties of defects, such as defect concentration and diffusion rate, require a knowledge of the entire 3N-dimensional defect total energy surface. We present a formalism for obtaining such defect energy surfaces from total energy calculations. Preliminary results of the application of this formalism to the silicon selfinterstitial are described. Implications for understanding the remarkable experimental high temperature diffusion entropies are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 123
Copyright
Copyright © Materials Research Society 1985

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References

1) Bar-Yam, Y. and Joannopoulos, J. D., Phys. Rev. Lett. 52, 1129 (1984).CrossRefGoogle Scholar
2) Bar-Yam, Y. and Joannopoulos, J. D., Phys. Rev. B 30, 2216 (1984).CrossRefGoogle Scholar
3) Bar-Yam, Y. and Joannopoulos, J. D., J. Electron. Mater. 14a, 261 (1985).Google Scholar
4) Car, Roberto, Kelly, Paul J., Oshiyama, Atsushi, and Pantelides, Sokrates T., Phys. Rev. Lett. 42, 1814 (1984).CrossRefGoogle Scholar
5) Car, Roberto, Kelly, Paul J., Oshiyama, Atsushi, and Pantelides, Sokrates T., J. Electron. Mater. 14a, 269 (1985).Google Scholar
6) Car, Roberto, Kelly, Paul J., Oshiyama, Atsushi, and Pantelides, Sokrates T., Phys. Rev. Lett. 54, 360 (1985).Google Scholar
7) Baraff, G. A. and Schllter, M., Phys. Rev. B 30, 3460 (1984).CrossRefGoogle Scholar
8) SchlUter, M., J. Electron. Mater. 14a, 19 (1985).Google Scholar
9) Lannoo, M. and Bourgoin, J., Point Defects in Semiconductors I, (Springer-Verlag, Berlin, 1981).Google Scholar
10) Franklin, W. M., in Diffusion in Solids, edited by Nowick, A. S. and Burton, J. J., (Academic Press, New York, 1975).Google Scholar
11) Frank, Werner, Gösele, Ulrich, Mehrer, Helmut, and Seeger, Alfred, in Diffusion in Solids II, edited by Nowick, A. S. and Murch, G., (Academic Press, 1985).Google Scholar
12) Mermin, N. D., Phys. Rev. 137, A1441 (1965).CrossRefGoogle Scholar
13) Vechten, J. A. Van, in Handbook on Semiconductors, edited by Keller, S. P. (North-Holland, Amsterdam, 1980).Google Scholar