Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T18:53:04.726Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs

Published online by Cambridge University Press:  28 July 2011

Dongping Wu ,
Jun Lu ,
Stefan Persson ,
Per-Erik Hellström ,
Elizaveta Vainonen-Ahlgren ,
Eva Tois ,
Marko Tuominen ,
Mikael Östling  and
Shi-Li Zhang
Dongping Wu
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista,Sweden; E-mail: dongping@imit.kth.se
Jun Lu
Affiliation:
Uppsala University, The Ångström Laboratory, Box 534, SE-75121 Uppsala, Sweden.
Stefan Persson
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Per-Erik Hellström
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Elizaveta Vainonen-Ahlgren
Affiliation:
ASM Microchemistry Ltd., Hämeentie 135 A FIN-00560 Helsinki, Finland.
Eva Tois
Affiliation:
ASM Microchemistry Ltd., Hämeentie 135 A FIN-00560 Helsinki, Finland.
Marko Tuominen
Affiliation:
ASM Microchemistry Ltd., Hämeentie 135 A FIN-00560 Helsinki, Finland.
Mikael Östling
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Shi-Li Zhang
Affiliation:
KTH, Royal Institute of Technology, Department of Microelectronics and Information Technology, Electrum 229, SE-164 40 Kista, Sweden
Get access

Abstract

In order to combine the merits of both HfO2 and Al2O3 as high-κ gate dielectrics for CMOS technology, high-κ nanolaminate structures in the form of either Al2O3/HfO2/Al2O3 or Al2O3/HfAlOx/Al2O3 were implemented in pMOSFETs and electrically and microstructurally charachterized. ALD TiN film was used as the metal gate electrodes for the pMOSFETs. After full transistor-processing including a rapid thermal processing step at 930 °C, the HfO2 film in the former nanolaminate was found to be crystallized. In contrast, the HfAlOx layer in the latter nanolaminate remained in the amorphous state. Both types of pMOSFETs exhibited a hysteresis as small as ∼20 mV in C-V characteristics in the bias range of +/− 2 V. They also showed a reduced gate leakage current. The pMOSFET with the Al2O3/HfAlOx/Al2O3 nanolaminate was characterized with a subthreshold slope of 77 mV/decade and a channel hole mobility close to the universal hole mobility curve. The pMOSFET with the Al2O3/HfO2/Al2O3, however, exhibited a subthreshold slope of 100 mV/decade and a ∼30% lower hole mobility than the universal curve.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D2.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. International Technology Roadmap for Semiconductors (ITRS), 2003 update.Google Scholar
2. Kang, S.K., et al. , Appl. Phys. Lett. 83, 2004 (2003).Google Scholar
3. Zhu, W.J., et al. , IEEE Electron Dev. Lett. 23, 649 (2002).Google Scholar
4. Wilk, G.D., Wallance, R.M., and Anthony, J.M., J. Appl. Phys. 89, 5243 (2001).Google Scholar
5. Park, B.K., et al. , Appl. Phys. Lett. 80, 2368 (2002).Google Scholar
6. Wu, D., et al. , IEEE Electron Device Lett., 24, 171 (2003).Google Scholar
7. Lee, P. F., et al. , J. Appl. Phys. 93, 3665 (2003).Google Scholar
8. Lee, P. F., et al. , Appl. Phys. Lett. 82, 2419 (2003).Google Scholar
9. Bae, S.H., et al. , IEEE Electron Device Lett. 24, 556 (2003).Google Scholar
10. Wong, H.-S.P., IBM J. Res. Dev., 46, 133 (2002).Google Scholar
11. Lee, W.-C., King, T.-J., and Hu, C., IEEE Electron Device Lett, 20, 268 (1999).Google Scholar
12. Wu, D., et al. , Electrochemical and Solid-State Lett., (2004) (in press).Google Scholar
13. Datta, S., et al. , IEDM Tech. Digest, 653 (2003).Google Scholar