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Study on Chemical Treatment and High Temperature Nitridation of Sapphire for III-Nitride Heteroepitaxial Growth

Published online by Cambridge University Press:  11 February 2011

F. Dwikusuma ,
D. Saulys  and
T. F. Kuech
F. Dwikusuma
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
D. Saulys
Affiliation:
Materials Research Science and Engineering Center, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

We have systematically studied the effects of wet chemical etching and high temperature nitridation on the resulting sapphire surface morphology and chemical transformation. The etching of c-plane sapphire substrates using H2SO4, H3PO4, and a 3:1 H2SO4 :H3PO4 mixture as a function of temperature and etching time was studied and compared with H2 etching at 1100°C and air-annealing at 1400°C. The surface nitridation using NH3 and N2 at 1100°C was studied as a function of NH3 concentration, nitridation time, and surface pretreatment. Atomic force microscopy and x-ray photoelectron spectroscopy were used to study the surface morphology and chemical composition. The detailed surface morphology after chemical etching was a function of the chemical composition and the specific time and temperatures. The smoothest, pit-free sapphire surface was obtained by etching in pure H2SO4 at 300°C for 30 min. Sulfuric acid etching at higher temperatures or for longer periods generated an insoluble mixture of Al2(SO4)3 and Al2(SO4)3·17H2O crystalline deposits on the surface. Phosphoric acid and the 3:1 H2SO4:H3PO4 mixture etched the sapphire preferentially at defect sites and resulted in pits formation on the surface. The high temperature sapphire nitridation resulted in nitrogen incorporation into the surface. The nitrogen content of nitridation layer depends on NH3 concentration, nitridation time, and surface pretreatment. The nitrogen contents of sapphire treated with H2SO4 and 3:1 H2SO4:H3PO4 are about the same as the as-received sapphire. While the nitrogen content of the air-annealed sapphire is ∼1.6 times higher then the nitrogen content of the as-received sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.4
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Reisman, A., Berkenblit, M., Cuomo, J., and Chan, S. A., J. Electrochem. Soc. 118, 1653 (1971).Google Scholar
2. Keller, S., Kemmer, B. P., Wu, Y. F., Heyring, B., Kapolnek, D., Speck, J. S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 68, 1525 (1996).Google Scholar
3. Cui, J., Sun, A., Reshichkov, M., Yun, F., Baski, A., and Morkoç, H., MRS Internet J. Nitride Semicond. Res. 5, 7 (2000).Google Scholar
4. Hashimoto, T., Terakoshi, Y., Ishida, M., Yuri, M., Imafuji, O., Sugino, T., Yoshikawa, A., and Itoh, K., J. Cryst. Growth 189/190, 254 (1998).Google Scholar
5. Grandjean, N., Massies, J., Martinez, Y., Vennéguès, P., Leroux, M., and Laügt, M., J. Cryst. Growth 179, 220 (1997).Google Scholar
6. Heikkinen, K., private communication, Saint-Gobain Crystal & Detectors, Washougal, WA (2001).Google Scholar
7. Soares, E. A., Van Hove, M. A., Walters, C. F., and McCarty, K. F., Phys. Rev. B 65, 195405 (2002).Google Scholar
8. Heffelfinger, J. R., Bench, M. W., and Carter, C. B., Surf. Sci. 370, L168 (1997).Google Scholar
9. Dwikusuma, F., Saulys, D., and Kuech, T. F., J. Electrochem. Soc 149, G603–G608 (2002).Google Scholar
10. Hwangbo, C. K., Lingg, L. J., Lehan, J. P., Macleod, H. A., and Suits, F., Appl. Opt. 28, 2779 (1989).Google Scholar
11. Dryburgh, P. M., J. Cryst. Growth 94, 23 (1989).Google Scholar