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Light beam induced current measurements on ZnO Schottky diodes and MESFETs

Published online by Cambridge University Press:  31 January 2011

Holger von Wenckstern ,
Zhipeng P. Zhang ,
Michael Lorenz ,
Christian Czekalla ,
Heiko Frenzel ,
Alexander Lajn  and
Marius Grundmann
Holger von Wenckstern
Affiliation:
wenckst@physik.uni-leipzig.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
Zhipeng P. Zhang
Affiliation:
zhangzhipeng@gmx.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
Michael Lorenz
Affiliation:
lorenz.ml@physik.uni-leipzig.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
Christian Czekalla
Affiliation:
czekalla@physik.uni-leipzig.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
Heiko Frenzel
Affiliation:
HFrenzel@physik.uni-leipzig.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
Alexander Lajn
Affiliation:
lajn@uni-leipzig.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
Marius Grundmann
Affiliation:
grundmann@physik.uni-leipzig.de, Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Leipzig, Germany
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Abstract

The homogeneity of the Schottky barrier potential of reactively sputtered PdOy/ZnO Schottky contacts has been investigated by light beam-induced current measurements on the micrometer scale. It is found that a metallic capping layer, acting as an equipotential surface, is not necessary for PdOy/ZnO Schottky contacts in contrast to AgxO/ZnO Schottky diodes. Further, we probed the generated photocurrent of a ZnO-based metal-semiconductor field-effect transistor for a closed and open channel, respectively. The photocurrent is, in general, one order of magnitude larger for closed channel conditions. The position of maximum photocurrent generation shifts towards the drain for higher source drain voltages for closed channel conditions, whereas it is nearly independent of the source drain potential for an open channel.

Keywords

thin filmdevicesII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H04-02
Copyright
Copyright © Materials Research Society 2010

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