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Theory of Electrically Controlled Resonant Tunneling Spin Devices

Published online by Cambridge University Press:  15 March 2011

David Z.-Y. Ting  and
Xavier Cartoixà
David Z.-Y. Ting
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099, U.S.A.
Xavier Cartoixà
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A.
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Abstract

We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling spin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity. The bi-directional spin pump induces the simultaneous flow of oppositely spin-polarized current components in opposite directions through spin-dependent resonant tunneling. The efficiency of resonant tunneling spin devices can be improved when the effects of structural inversion asymmetry (SIA) and bulk inversion asymmetry (BIA) are combined properly, and incorporated into device design. The current spin polarizations of the proposed devices are electrically controllable, and potentially amenable to high-speed modulation. In principle, the electrically modulated spin-polarized current source could be integrated in optoelectronic devices for added functionality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G4.9
Copyright
Copyright © Materials Research Society 2004

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