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The Effect of Temperature in a thin Si Nanowire Transistor, with a Single Donor in the Channel, using Dissipative Physics

Published online by Cambridge University Press:  20 May 2013

Antonio Martinez ,
Karol Kalna  and
Manuel Aldegunde
Antonio Martinez
Affiliation:
Electronic Systems Design Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PY,Wales, UK.
Karol Kalna
Affiliation:
Electronic Systems Design Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PY,Wales, UK.
Manuel Aldegunde
Affiliation:
Electronic Systems Design Centre, College of Engineering, Swansea University, Singleton Park, Swansea, SA2 8PY,Wales, UK.
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Abstract

Dissipative quantum transport simulations using the Non-Equilibrium Green Function Formalism have been carried out to obtain a transfer characteristic of a Si gate-all-around (GAA) nanowire transistor. A donor-type impurity has been located close to the source/channel interface, creating a resonant level. The existence and energy of the resonant level depends on the value of the gate bias. The dependence of the current reduction due to phonon scattering as a function of the gate bias, has a minimum due to the resonant level. The simulations at different temperatures have shown a decline in the sub-threshold slope at high temperature and an improvement at low temperature. Finally, the sub-threshold slope approximate follows the standard linear temperature dependence.

Keywords

nanostructuresimulationmicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1550: Symposium Q – Surfaces of Nanoscale Semiconductors , 2013 , mrss13-1550-q03-14
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

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