Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T12:44:41.439Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrochemical Fabrication of InSb Nanowires using Porous Alumina Membrane and their Characterization

Published online by Cambridge University Press:  01 February 2011

Muhammad Ibrahim Khan ,
Xu Wang ,
Krassimir N. Bozhilov  and
Cengiz S. Ozkan
Muhammad Ibrahim Khan
Affiliation:
mkhan005@ucr.edu, University of California Riverside, Mechanical Engineering, B 136 Bourns Hall, Riverside, CA, 92521, United States, +1-909-342-0536, +1-505-213-7946
Xu Wang
Affiliation:
xwang0@engr.ucr.edu, University of California Riverside, Department of Chemical Engineering, Riverside, CA, 92521, United States
Krassimir N. Bozhilov
Affiliation:
bozhilov@ucr.edu, University of California Riverside, Central Facility for Advanced Microscopy and Microanalysis, Riverside, CA, 92521, United States
Cengiz S. Ozkan
Affiliation:
cozkan@engr.ucr.edu, University of California Riverside, Department of Mechanical Engineering, Riverside, CA, 92521, United States
Get access

Abstract

Among various ways to produce nanowires; anodic alumina membrane (AAM) based synthesis has constantly received much attention because AAM possess a uniform and parallel porous structure which makes them an ideal template material for creating highly ordered nanostructures. In this paper we report fabrication of InSb nanowire arrays with diameter of 200 nm and 30 nm by direct current electrodeposition inside the nanochannels of anodic alumina membranes without subsequent annealing. The nanowires have four major growth direction, [220] being the most dominant with structure defects such as twins. The transmission electron microscopy (TEM) and scanning electron microscopy (SEM) results demonstrate that these InSb nanowires are uniform with diameters about 200 nm and 30 nm, corresponding to the pore diameter of the AAMs. The nanowires also conduct almost no current in the dark, but when hit with light, they conduct 10,000 times more current. This photoconduction property could lead to a variety of tiny optoelectronic devices potentially useful in future generations of nanoelectronics and chemical sensors. The light-induced conductivity increase and the temperature dependent behavior of the nanowires are also reported.

Keywords

III-Vnanostructureelectrodeposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1080: Symposium O – Semiconductor Nanowires–Growth, Physics, Devices and Applications , 2008 , 1080-O08-09
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Zhang, X.R., Hao, Y.F., Meng, G.W., Zhang, L.D., J. Electrochem. Soc. C 152, 664 (2005)Google Scholar
2. McChesney, J.-J., Haigh, J., Dharmadasa, I.M., Mowthorpe, D.J.. Optical Materials, 6 (1996) 63–67 Google Scholar
3. Fulop, T., Bekele, C., Landau, U., Angus, J., Kash, K.. Thin Solid Films. 449, 1–5 (2004)Google Scholar
4. Lee, Kwan H., Lee, Jong Y., and Jeung, Won Y., 206th Meeting ECS Inc. Abs. 48 (2004)Google Scholar
5. Yang, Youwen, Li, Liang, Huang, Xiaohu, Ye, Min, Wu, Yucheng, Materials Letters, 60, 569–571 (2006)Google Scholar
6. yang, Y.w., , li, huang, X.h., yel, M., wu, Y.c., li, G.h., Appl. Phys. A 84, 7–9 (2006)Google Scholar
7. Chen, L.P., Lou, J. J., Liu, T. H., Pang, Y.M. Solid-State Electronics Vol. 35, No. 8, pp. 1081–1084, (1992)Google Scholar
8. Avery, D.G., Goodwin, D.W., Renni, A.E., Journal of Scientific Instruments 394 Vol.34, (1957)Google Scholar
9. Mengoli, G., M, , Musiani, M., Paolucci, F., Journal of Applied Electrochemistry, 21, 863–868 (1991)Google Scholar
10. Walter, E. C., Penner, R. M., Liu, H., Ng, K. H., Zach, M. P. Surf. Interface Anal. 2002; 34: 409–412 Google Scholar
11. Udayshankar, N K and Bhat, H L, Bull. Mater. Sci., Vol. 24, No. 5, pp. 445–453. (2001)Google Scholar
12. Yang, Peidong et al. Adv. Mater., 14, No. 2, (2002)Google Scholar
13. Mingoa, N., Applied Physics Letters Volume 84, Number 14 (2004)Google Scholar
14. He, J. H., Lee, S. W., Chueh, Y. L., and Chou, L. J., Applied Physics Letters, 86, 263109 (2005)Google Scholar
15. Dharmadasa, I. M. and Haigh, J., Journal of The Electrochemical Society, 153, G47–G52 (2006)Google Scholar