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On the Contribution of a Nitrogen-Related Defect in the Nexafs Spectra of Thin Si3N4 Films

Published online by Cambridge University Press:  22 February 2011

E. C. Paloura ,
A. Knop ,
U. Dobler ,
K. Holldack  and
S. Logothetidis
E. C. Paloura
Affiliation:
Aristotle University of Thessaloniki, Physics Dept, GR-54006 Thessaloniki, Greece.
A. Knop
Affiliation:
SIETEC GmbH at BESSY, Lentzeallee 100, D-1000 Berlin 33, Germany.
U. Dobler
Affiliation:
SIETEC GmbH at BESSY, Lentzeallee 100, D-1000 Berlin 33, Germany.
K. Holldack
Affiliation:
University of Heidelberg, Institute of Applied Physical Chemistry, Im Neuenheimer Feld 253, 6900 Heidelberg, Germany BESSY, Lentzeallee 100, D-1000 Berlin 33, Germany.
S. Logothetidis
Affiliation:
Aristotle University of Thessaloniki, Physics Dept, GR-54006 Thessaloniki, Greece.
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Abstract

Thin amorphous SiN films grown on Si are studied with Near Edge X-Ray Absorption Fine Structure (NEXAFS). The NEXAFS spectra of N-rich films are characterized by a strong resonance line (RL) at the onset of the N K- edge. The intensity of the RL in N-rich films increases with the N/Si ratio, while the same RL is detected in the NEXAFS spectra of stoichiometric SiN films subjected to damage with Ar+ ion bombardment. The RL is attributed to a N-related defect which is strongly localized in a pure 2p orbital. The RL, which is identified as a bulk nitride property, can be annealed out at temperatures higher than the growth temperature. It is proposed that the annealing process of the RL, which is characterized by an activation energy of 0.87eV, is due to Si-N bond formation, where the Si atoms are provided by the stressed SiN/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 107
Copyright
Copyright © Materials Research Society 1993

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