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The Formation of Silicon Clusters in Plasma-Enhanced Chemically Vapour Deposited Si:O:H:F Alloys

Published online by Cambridge University Press:  21 February 2011

A. G. Dias  and
J. Figueiredo
A. G. Dias
Affiliation:
Centro de Fisica Molecular das Universidades de Lisboa, Instituto Nacional de Investigaçāo Científica, Complexo I (I.S.T.), Av. Rovisco Pais, 1000 Lisboa, Portugal
J. Figueiredo
Affiliation:
Centro de Fisica Molecular das Universidades de Lisboa, Instituto Nacional de Investigaçāo Científica, Complexo I (I.S.T.), Av. Rovisco Pais, 1000 Lisboa, Portugal
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Abstract

The structural and optoelectronic properties of a new plasma-enhanced chemically vapour deposited Si:O:H:F alloy are reported taking into account respectively the results from X-ray diffraction, Raman and infrared absorption spectroscopy analysis and from dark and photo conductivity and optical absorption measurements. Films produced with a F2/SiH4 gas ratio (r) lower or equal than 0.4 are amorphous semiconducting Si:O:H:F alloys, whereas films deposited with r≤0.5 exhibit a multiphase structure consisting of silicon clusters embedded in an amorphous insulating fluorine doped silicon oxide tissue. The formation of silicon clusters is the result of a segregation process of the fluorine and oxygen atoms in the amorphous Si:O:H:F matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 57
Copyright
Copyright © Materials Research Society 1990

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