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Electrical and Structural Characterization of Polysilicon Deposited in a Rapid Thermal Processor*

Published online by Cambridge University Press:  21 February 2011

X. Ren ,
M.C. Öztüirk ,
J.J. Wortman ,
D. Batchelor ,
D. Maher ,
C. Blat  and
E. Niccolian
X. Ren
Affiliation:
North Carolina State UniversityDepartment of Electrical and Computer Engineering Raleigh, NC 27695-7911
M.C. Öztüirk
Affiliation:
North Carolina State UniversityDepartment of Electrical and Computer Engineering Raleigh, NC 27695-7911
J.J. Wortman
Affiliation:
North Carolina State UniversityDepartment of Electrical and Computer Engineering Raleigh, NC 27695-7911
D. Batchelor
Affiliation:
North Carolina State UniversityDepartment of Materials Engineering Raleigh, NC 27695-7907
D. Maher
Affiliation:
North Carolina State UniversityDepartment of Materials Engineering Raleigh, NC 27695-7907
C. Blat
Affiliation:
University of North CarolinaDepartment of Electrical Engineering Charlotte, NC 28223
E. Niccolian
Affiliation:
University of North CarolinaDepartment of Electrical Engineering Charlotte, NC 28223
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Abstract

Low pressure chemical vapor deposition of polysilicon in a lamp heated rapid thermal processor (RTCVD) has been studied. Polysilicon films were deposited using SiH4 diluted in Ar. Structural characterization of the films was accomplished by transmissionelectron microscopy (TEM), scanning tunneling microscopy (STM), secondary ion mass spectroscopy (SIMS), auger electron spectroscopy (AES) and ultraviolet surface reflectance measurements. Smooth polysilicon films were obtained at deposition temperatures above 700ºC with rms roughness values better than 100 Å. Both p- and n- polysilicon gated MOS capacitors were fabricated using 80 - 200 Å thick gate oxides grown by dry oxidation in a conventional furnace. Polysilicon doping was achieved by ion-implantation and rapid thermal annealing (RTA). Our results show that the electrical properties ofthe capacitors fabricated using RTCVD polysilicon are comparable to those of conventional polysilicon. Dopant diffusion through the gate is a problem for both types of polysilicon and can lead to a degradation of the electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 29
Copyright
Copyright © Materials Research Society 1990

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Footnotes

*

This work has been partially supported by the NSF Engineering Research Centers Program through the Center for Advanced Electronic Materials Processing (Contract # CDR-8721505) and the North Carolina SEMATECH Center of Excellence (Contract # 88-MC-809)

References

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