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Depth Profiling of Cu(In,Ga)Se2 by Grazing Incidence X-ray Diffraction

Published online by Cambridge University Press:  01 February 2011

I.M. Kötschau ,
G. Bilger  and
H.W. Schock
I.M. Kötschau
Affiliation:
Hahn-Meitner-Institute, Berlin, Germany
G. Bilger
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Garmany
H.W. Schock
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Garmany
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Abstract

Grazing incidence X-ray diffraction (GIXRD) in conjunction with a layer absorption modeling algorithm is a powerful tool for studying the structural properties of polycrystaline thin films. A typical application is the refinement of compositional depth profiles. Of genera interest are the depth profile of the Ga/(In+Ga)-ratio over the entire thickness of the thin film, as well as the depth profile of th Cu/(In+Ga)-ratio near the surface. In this respect the three stage process is a particular interesting deposition technique. A remarkable recrystalization of the entire thin film at the end of the second stage has a strong impact on Ga-gradients as well as on the Cu-depletion close to the surface. In this contribution we use the GIXRD technique to refine composititional depth profiles obtained by secondary ion mass spectrometry (SIMS). We demonstrate that structura changes near the surface due to the recrystalization can be monitored. In addition we are able measure the depth of a Cu-depleted surface layer with high accuracy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B6.2
Copyright
Copyright © Materials Research Society 2003

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