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Growth Temperature and Properties of Ge4Sb3Te3 Films

Published online by Cambridge University Press:  01 February 2011

W. D. Song ,
L. P. Shi ,
X. S. Miao ,
X. Hu ,
H. K. Lee ,
R. Zhao ,
J. F. Chong  and
T. C. Chong
W. D. Song
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
L. P. Shi
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
X. S. Miao
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
X. Hu
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
H. K. Lee
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
R. Zhao
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
J. F. Chong
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
T. C. Chong
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
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Abstract

The growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 °C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature. The typical resistivity and carrier density are in the order of 10-4 Ωcm and 1021 cm-3 for crystalline phase. It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D6.14
Copyright
Copyright © Materials Research Society 2005

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References

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