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Boron Segregation and Out-diffusion in Single-Crystal Si 1-y C y

Published online by Cambridge University Press:  01 February 2011

E. J. Stewart  and
J.C. Sturm
E. J. Stewart
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, Princeton NJ
J.C. Sturm
Affiliation:
Center for Photonics and Optoelectronic Materials, Department of Electrical Engineering Princeton University, Princeton NJ
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Abstract

Boron segregation and its effect on carbon diffusion is studied in single-crystal Si1-yCy. We find that boron segregates from silicon to Si0.996C0.004 at a level m=[B]SiC/[B]Si = 1.7 during a 2 hour, 850°Cannealin N2. After this anneal, if most of the carbon is then removed from the Si1-yCy layer (via an oxidation-enhanced out-diffusion process), most of the boron segregation is removed as well. This argues against immobile B-C defects as the predominant mechanism driving the segregation. Boron is shown to increase carbon diffusion during the N2 anneal, but also appears to enhance carbon precipitation during a subsequent oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.18
Copyright
Copyright © Materials Research Society 2003

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