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Plasmonic isolator for photonic integrated circuits

Published online by Cambridge University Press:  11 June 2018

Hiromasa Shimizu  and
Vadym Zayets
Hiromasa Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Japan; h-shmz@cc.tuat.ac.jp
Vadym Zayets
Affiliation:
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Japan; v.zayets@aist.go.jp
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Abstract

This article discusses recent studies of on-chip integration of a plasmonic isolator on a Si substrate and a hybrid isolator on an InP substrate. The key characteristics of the plasmonic isolator are reviewed and future prospects are discussed. A method to enhance the magneto-optical figure of merit (FOM) and reduce the propagation loss of a surface plasmon in order to realize the proposed design of the plasmonic isolator is described. One hundred percent enhancement of the FOM and 20× reduction of propagation loss in the optimized ferromagnetic plasmonic structure are experimentally demonstrated.

Keywords

ferromagneticmagneto-opticoptical propertiesoptoelectronic
Type
Materials for Nonreciprocal Photonics
Information
MRS Bulletin , Volume 43 , Issue 6: Materials for Nonreciprocal Photonics , June 2018 , pp. 425 - 429
Copyright
Copyright © Materials Research Society 2018 

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