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Preferential Growth of CoSi2 in Co/Si Solid State Interaction by Rapid Thermal Annealing

Published online by Cambridge University Press:  28 February 2011

Ping Liu ,
Feng Hong ,
Bing-Zong Li  and
Xiao-Liang Sheng
Ping Liu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai, China
Feng Hong
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai, China
Bing-Zong Li
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai, China
Xiao-Liang Sheng
Affiliation:
Research Center of Analysis and Measurement, Fudan University, Shanghai, China
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Abstract

The CoSi2 thin film growth by Co/Si solid state interaction was investigated. The electrical and crystal properties of the films formed on (111) and (100) Si substrates were characterized after a rapid thermal annealing. A strong preferential CoSi2 (111) orientation grain growth was observed on (111)Si substrate. The formed CoSi2 film was highly conductive with a resistivity of 15.5 µΩ · cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 269
Copyright
Copyright © Materials Research Society 1990

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References

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