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Millisecond Annealing: Past, Present and Future

Published online by Cambridge University Press:  01 February 2011

Paul Timans ,
Jeff Gelpey ,
Steve McCoy ,
Wilfried Lerch  and
Silke Paul
Paul Timans
Affiliation:
paul.timans@mattson.com, Mattson Technology, Inc., Technology, 47131 Bayside Parkway, Fremont, 94538, United States
Jeff Gelpey
Affiliation:
Jeff.Gelpey@mattson.com, Mattson Technology Canada, Inc., 605 West Kent Avenue, Vancouver, V6P 6T7, Canada
Steve McCoy
Affiliation:
Steve.McCoy@mattson.com, Mattson Technology Canada, Inc., 605 West Kent Avenue, Vancouver, V6P 6T7, Canada
Wilfried Lerch
Affiliation:
wilfried.lerch@mattson.com, Mattson Thermal Products GmbH, 10 Daimlerstrasse, Dornstadt, N/A, 89160, Germany
Silke Paul
Affiliation:
Silke.Paul@mattson.com, Mattson Thermal Products GmbH, 10 Daimlerstrasse, Dornstadt, N/A, 89160, Germany
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Abstract

The challenge of achieving maximal dopant activation with minimal diffusion has re-awakened interest in millisecond-duration annealing processes, almost two decades after the initial research in this field. Millisecond annealing with pulsed flash-lamps or scanned energy beams can create very shallow and abrupt junctions with high concentrations of electrically active carriers, but solutions for volume manufacturing must also meet formidable process control requirements and economic metrics. The repeatability and uniformity of the temperature cycle is the key for viable manufacturing technology, and the lessons from the development of commercial rapid thermal processing (RTP) tools are especially relevant. Advances in the process capability require a fuller understanding of the trade-off between dopant activation, defect annealing. diffusion and deactivation phenomena. There is a strong need for a significant expansion of materials science research into the fundamental physical processes that occur at the short time scales and high temperatures provided by millisecond annealing.

Keywords

ion-implantationannealingSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-01
Copyright
Copyright © Materials Research Society 2006

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References

1 Thompson, S. E., Electrochem. Soc. Proc. PV 2004–01, (2004) 412.Google Scholar
2 Mansoori, M. M., Jain, A., Mercer, D. E., Robertson, L. and Kohli, P., Electrochem. Soc. Proc. PV 2002–11, (2002) 389.Google Scholar
3 Lerch, W., Paul, S., Niess, J., Cristiano, F., Lamrani, Y., Calvo, P., Cherkashin, N., Downey, D. F. and Arevalo, E. A., J. Electrochem. Soc. 152, (2005) G787.Google Scholar
4 Alquier, D., Benzohra, M., Boussaid, F., Olivie, F. and Martinez, A., Mat. Res. Soc. Symp. Proc. 469, (1997) 413.Google Scholar
5 Fiory, A. T., Bourdelle, K. K., Lefrancois, M. E., Camm, D. M. and Agarwal, A., Electrochem. Soc. Proc. PV 99–10, (1999) 133.Google Scholar
6 Timans, P. J. and Acharya, N., Electrochem. Soc. Proc. PV 2004–01, (2004) 11.Google Scholar
7 Hill, C., Mat. Res. Soc. Symp. Proc. 1, (1981) 361.Google Scholar
8 Hill, C., Mat. Res. Soc. Symp. Proc. 13, (1983) 381.Google Scholar
9 Cohen, R. L., Williams, J. S., Feldman, L. C. and West, K. W., Appl. Phys. Lett. 33, (1978) 751.Google Scholar
10 Lue, J. T., Appl. Phys. Lett. 36, (1980) 73.Google Scholar
11 Gat, A. and Gibbons, J. F., Appl. Phys. Lett. 32, (1978) 142.Google Scholar
12 Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Williams, P., Deline, V. and Evans, C. A. Jr., Appl. Phys. Lett. 33, (1978) 389.Google Scholar
13 Williams, J. S., Brown, W. L., Leamy, H. J., Poate, J. M., Rodgers, J. W., Rousseau, D., Rozgonyi, G. A., Shelnutt, J. A. and Sheng, T. T., Appl. Phys. Lett. 33, (1978) 542.Google Scholar
14 Naem, A. A., Boothroyd, A. R. and Calder, I. D., Mat. Res. Soc. Symp. Proc. 23, (1984) 229.Google Scholar
15 Carter, J. C., Evans, A. G. R., Timans, P. J. and England, J. M. C., J. Vac. Sci. Technol. B 9, (1991) 1944.Google Scholar
16 Gelpey, J., McCoy, S., Lerch, W., Paul, S., Niess, J., Cristiano, F. and Bolze, D., in 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors – RTP 2005, (IEEE, 2005) p. 73.Google Scholar
17 Lerch, W., Paul, S., Niess, J., McCoy, S., Selinger, T., Gelpey, J., Cristiano, F., Severac, F., Gavelle, M., Boninelli, S., Pichler, P. and Bolze, D., Mat. Sci. Eng. B 124–125, (2005) 24.Google Scholar
18 Mokhberi, A., Pelaz, L., Aboy, M., Marques, L., Barbolla, J., Paton, E., McCoy, S., Ross, J., Elliott, K., Gelpey, J., Griffin, P. B. and Plummer, J. D., in 2002 International Electron Devices Meeting Technical Digest, (IEEE, 2002) p. 879.Google Scholar
19 Jain, S. H., Griffin, P. B., Plummer, J. D., McCoy, S., Gelpey, J., Selinger, T. and Downey, D. F., IEEE Trans. Electron. Dev. 52, (2005) 1610.Google Scholar
20 Satta, A., Lindsay, R., Severi, S., Henson, K., Maex, K., McCoy, S., Gelpey, J. and Elliott, K., Mat. Res. Soc. Symp. Proc. 810, (2004) 15.Google Scholar
21 Severi, S., Meyer, K. De, Pawlak, B., Duffy, R., Kerner, C., McCoy, S., Gelpey, J., Selinger, T., Ragnarsson, L. A. and Absil, P. P., Extended Abstracts International Conference on Solid State Devices and Materials – SSDM, (Jap. Soc. Appl. Phys., 2005) p. 910.Google Scholar
22 Bennett, J., Braithwaite, G., Campion, A., Chaumont, M., Cleavelin, R., Currie, M. T., Gelpey, J., Gostowski, M., Kohli, P., Lochtefeld, A., McCoy, S., Nguyen, B., Pas, M., Rodder, M., Wise, R. and Yu, S., Electrochem. Soc. Proc. PV 2004–7, (2004) 1113.Google Scholar
23 Sasaki, Y., Jin, C. G., Tamura, H., Mizuno, B., Higaki, R., Satoh, T., Majima, K., Sauddin, H., Takagi, K., Ohmi, S., Tsutsui, K. and Iwai, H., in 2004 Symposium on VLSI Technology Technical Digest, (IEEE, 2004) p. 180.Google Scholar
24 Ito, T., Suguro, K., Tamura, M., Taniguchi, T., Ushiku, Y., Iinuma, T., Itani, T., Yoshioka, M., Owada, T., Imaoka, Y., Murayama, H. and Kusada, T., IEEE Trans. Semiconductor Manufacturing 16, (2003) 417.Google Scholar
25 Ootsuka, F., Ozaki, H., Sasaki, T., Yamashita, K., Takada, H., Izumi, N., Nakagawa, Y., Hayashi, M., Kiyono, K., Yasuhira, M., and Arikado, T., in 2003 International Electron Devices Meeting Technical Digest, (IEEE, 2003) p. 647.Google Scholar
26 Skorupa, W., Gebel, T., Yankov, R. A., Paul, S., Lerch, W., Downey, D. F. and Arevalo, E. A., J. Electrochem. Soc. 152, (2005) G436.Google Scholar
27 Jain, A., Mat. Res. Soc. Symp. 810, (2004) C5.6.1.Google Scholar
28 Talwar, S., Markle, D. and Thompson, M., Solid State Technology 46, (2003) 83 Google Scholar
29 Shima, A., Wang, Y., Talwar, S. and Hiraiwa, A., 2004 Symposium on VLSI Technology Technical Digest, (IEEE, 2004) p. 174.Google Scholar
30 MacKnight, R. B., Timans, P. J., Tay, S.-P., and Nenyei, Z., in 12 th IEEE International Conference on Advanced Thermal Processing of Semiconductors – RTP2004, edited by Gelpey, J., Lojek, B., Nenyei, Z. and Singh, R., (IEEE, 2004) p. 3.Google Scholar
31 Mokhberi, A., Griffin, P. B., Plummer, J. D., Paton, E., McCoy, S. and Elliott, K., IEEE Trans. Electron. Dev. 49, (2002) 1183.Google Scholar
32 Fiory, A. T. and Bourdelle, K. K., Appl. Phys. Lett. 74, (1999) 2658.Google Scholar
33 Pichler, P., Mat. Res. Soc. Symp. Proc. 717, (2002) C3.1.1.Google Scholar
34 Parry, C. P., Kubiak, R. A., Newstead, S. M., Whall, T. E. and Parker, E. H. C., J. Appl. Phys. 71, (1992) 118.Google Scholar
35 Timans, P. J., Lerch, W., Niess, J., Paul, S., Acharya, N. and Nenyei, Z., in 11 th IEEE International Conference on Advanced Thermal Processing of Semiconductors – RTP 2003, edited by Gelpey, J., Lojek, B., Nényei, Z. and Singh, R., (IEEE, 2003) p. 17.Google Scholar
36 International Technology Roadmap for Semiconductors 2005, Semiconductor Industry Association.Google Scholar
37 Gossmann, H.-J. L., Feng, T., Agarwal, A., Frisella, P. and Rubin, L. M., Mat. Res. Soc. Symp. Proc. 669, (2001) J8.4.1.Google Scholar
38 Jan, C.-H., Bai, P., Choi, J., Curello, G., Jacobs, S., Jeong, J., Johnson, K., Jones, D., Klopcic, S., Lin, J., Lindert, N., Lio, A., Natarajan, S., Neirynck, J., Packan, P., Park, J., Post, I., Patel, M., Ramey, S., Reese, P., Rockford, L., Roskowski, A., Sacks, G., Turkot, B., Wang, Y., Wei, L., Yip, J., Young, I., Zhang, K., Zhang, Y., Bohr, M. and Holt, B., in 2005 International Electron Devices Meeting Technical Digest, (IEEE, 2005) p. 65.Google Scholar
39 Faifer, V. N., Current, M. I., Wong, T. M. H. and Souchkov, V. V., J. Vac. Sci. Technol. B 24, (2006) 414.Google Scholar
40 Clarysse, T., Vanhaeren, D. and Vandervorst, W., J. Vac. Sci. Technol. B 20, (2002) 459.Google Scholar
41 Nissim, Y. I., Lietoila, A., Gold, R. B. and Gibbons, J. F., J. Appl. Phys. 51, (1980) 274.Google Scholar
42 Gold, R. B. and Gibbons, J. F., J. Appl. Phys. 51, (1980) 1256.Google Scholar
43 Timans, P. J., Nenyei, Z. and Berger, R., Solid State Technology 45, (2002) 67.Google Scholar
44 Timans, P. J., in Advances in Rapid Thermal and Integrated Processing, edited by Roozeboom, F., (Kluwer Academic Publishers, Dordrecht, 1996) p. 35.Google Scholar
45 Okabayashi, H., Yoshida, M., Ishida, K. and Yamane, T., Appl. Phys. Lett. 36, (1980) 202.Google Scholar
46 Timans, P. J., Mat. Res. Soc. Symp. Proc. 429, (1996) 3.Google Scholar
47 Chen, Y.-B., Zhang, Z. M. and Timans, P. J., in Proceedings of IMECE 2005: ASME International Mechanical Engineering Congress and Exposition, (Nov. 5-11, 2005, Orlando, Florida, USA), paper IMECE2005-82418.Google Scholar
48 Adams, B., Mayur, A., Hunter, A. and Ramanujam, R., in 13 th IEEE International Conference on Advanced Thermal Processing of Semiconductors – RTP 2005, (IEEE, 2005) p. 105.Google Scholar
49 Ito, T., Matsuo, K., Itokawa, H., Itani, T., Tamaoki, N., Honguh, Y., Suguro, K., Yokomori, T., Owada, T., Goto, Y., Nozaki, Y., Murayama, H., Kiyama, H. and Kusuda, T., in Ext. Abs. the 5th International Workshop on Junction Technology, (Jap. Soc. Appl. Phys., 2005) p. S4–3.Google Scholar
50 Mizuta, M., Sheng, N. H., Merz, J. L., Lietoila, A., Gold, R. B. and Gibbons, J. F., Appl. Phys. Lett. 37, (1980) 154.Google Scholar
51 Ishida, K., Okabayashi, H. and Yoshida, M., Appl. Phys. Lett. 37, (1980) 175.Google Scholar