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Comparative Study of HgI2, PbI2 and TlBr Films Aimed for Ionizing Radiation Detection in Medical Imaging

Published online by Cambridge University Press:  12 July 2011

Marcelo Mulato
Affiliation:
Department of Physics, University of São Paulo, Ribeirão Preto-SP Brazil
José F. Condeles
Affiliation:
Department of Physics, Universidade Federal do Triângulo Mineiro, Uberaba-MG, Brazil
Julio C. Ugucioni
Affiliation:
Department of Physics, University of São Paulo, Ribeirão Preto-SP Brazil
Ademar M. Caldeira-Filho
Affiliation:
Department of Physics, University of São Paulo, Ribeirão Preto-SP Brazil
Natalia Destefano
Affiliation:
Department of Physics, University of São Paulo, Ribeirão Preto-SP Brazil
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Abstract

Wide bandgap semiconductor films were obtained by spray pyrolysis, thermal evaporation and casting. These films were characterized under similar conditions in order to compare their structures, surface morphology and photocurrent properties. All films show either a crystalline or a polycrystalline structure. SEM pictures of sprayed films present holes and fissures and non-total covering of the substrate. The photoresponse was obtained for evaporated TlBr films, HgI2 casted with polystyrene (PS) scaffold, sprayed and evaporated PbI2 films. The photo to dark current ratio is discussed as well as the difference of photo to dark current at an electric field of 100 V/cm. The discussion also focuses on a future optimized material.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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