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Analysis of Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Capacitance–Voltage Method

Published online by Cambridge University Press:  02 August 2012

Yoshihiro Ueoka
Affiliation:
Nara Institute of Science and Technology (NAIST), Graduate School of Material Science, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Mami Fujii
Affiliation:
Nara Institute of Science and Technology (NAIST), Graduate School of Material Science, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Haruka Yamazaki
Affiliation:
Nara Institute of Science and Technology (NAIST), Graduate School of Material Science, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Masahiro Horita
Affiliation:
Nara Institute of Science and Technology (NAIST), Graduate School of Material Science, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Yasuaki Ishikawa
Affiliation:
Nara Institute of Science and Technology (NAIST), Graduate School of Material Science, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
Yukiharu Uraoka
Affiliation:
Nara Institute of Science and Technology (NAIST), Graduate School of Material Science, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Abstract

Effect of high-pressure water vapor (HPV) annealing is discussed from density of state (DOS) by capacitancevoltage (CV) method and ΔVFB by the cyclic CV measurement. The DOS of HPV samples were smaller than that of conventional atmosphere (AT) annealing around conduction band minimum (Ec). The ΔVFB of HPV samples were also smaller than that of AT. This suggests that HPV annealing is an effective method to decrease electron trap density as compared with AT condition. Especially, HPV 0.5 MPa sample was lower electron trap density and more stable than the other pressure HPV samples. Therefore, it is considered that the HPV in 0.5 MPa is the most promising condition. In addition, we succeeded in demonstrating the analysis of trap density in thin film by CV method and cyclic CV measurement.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

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