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Characterisation of TiO2 films grown at low temperatures for alternative gate dielectric application

Published online by Cambridge University Press:  21 March 2011

Jun-Ying Zhang  and
Ian W. Boyd
Jun-Ying Zhang
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, People's, Republic of China
Ian W. Boyd
Affiliation:
Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK
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Abstract

In this paper we report the growth of thin titanium oxide films on Si (100) and quartz at low temperatures (≤350°C) by photo-induced chemical vapor deposition (photo-CVD) with 222 nm UV radiation using a novel injection liquid source, which overcomes the reproducible problem in conventional bubblers. The properties of the films formed have been studied using ellipsometry, UV spectrophotometry and Fourier transform infrared spectroscopy (FTIR) measurements. Nanostructured films were observed by atomic force microscopy (AFM). It was found that crystalline TiO2 films could be formed at deposition temperatures as low as 210°C by x-ray di ffraction (XRD). The influence of the deposition temperature on the film is discussed. The refractive index as high as 2.5 can be obtained at a deposition temperature of 350°C, while an optical transmittance of between 80-95% in the visible region of the spectrum was obtained at different deposition temperatures. Physical and optical characterization both reveal good film qualities, rendering this technique promising for a wide range of industrial application in low temperature microelectronic and optoelectronic material processing as well as for many heat sensitive compounds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K2.10
Copyright
Copyright © Materials Research Society 2001

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References

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