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Photo-electrical Effect of Pristine and Functionalized Graphene Grown by Chemical Vapor Deposition

Published online by Cambridge University Press:  20 May 2011

Jian Lin
Affiliation:
Department of Mechanical engineering,, University of California at Riverside, Riverside, CA 92521, U.S.A.
Jiebin Zhong
Affiliation:
Department of Mechanical engineering,, University of California at Riverside, Riverside, CA 92521, U.S.A.
Jennifer Reiber Kyle
Affiliation:
Department of Electrical engineering,, University of California at Riverside, Riverside, CA 92521, U.S.A.
Miroslav Penchev
Affiliation:
Department of Electrical engineering,, University of California at Riverside, Riverside, CA 92521, U.S.A.
Mihrimah Ozkan
Affiliation:
Department of Electrical engineering,, University of California at Riverside, Riverside, CA 92521, U.S.A.
Cengiz S. Ozkan
Affiliation:
Department of Mechanical engineering,, University of California at Riverside, Riverside, CA 92521, U.S.A. Department of Material science and engineering, University of California at Riverside, Riverside, CA 92521, U.S.A.
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Abstract

In this poster we will present the photo-electrical effect of pristine and nitric acid treated graphene field effect transistors made by chemical vapor deposition (CVD). The results of the decreased electrical conductance and shift of Dirac point arise from the molecular photodesorption from graphene. When post treated with nitric acid the photodesorption efficiency was decrease from 52% to 21%, which was proposed to be caused by the passivation of oxygen-bearing functionalities to CVD graphene structural defects. This result provides a new strategy of stabilizing the electrical performance of CVD graphene which is promising candidate as highly conductively photoelectrical material.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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