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Low Temperature Reordering of Implanted Amorphous Si with Al Surface Layers

Published online by Cambridge University Press:  26 February 2011

L. S. Hung ,
S. H. Chen  and
J. W. Mayer
L. S. Hung
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
S. H. Chen
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, NY 14853
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Abstract

Ion backscattering and channeling techniques, transmission and scanning electron microscopy, and secondary ion mass spectroscopy were used to investigate the reordering characteristics of implanted amorphous Si in the presence of an Al surface layer. It was found that reordering takes place at the temperature of about 400°C and is associated with an interfacial migration between Al and Si. The regrowth behavior appears to be a function of the initial annealing temperature and annealing sequence. High density of twin faults and substantial concentration of Al are observed in the regrown layers. We believe that the low temperature reordering is due to processes analogous to solid epitaxial growth with transport media.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 337
Copyright
Copyright © Materials Research Society 1985

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