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Refractory Thin-Film Metallizations with Controlled Stress and Electrical Resistivity

Published online by Cambridge University Press:  17 March 2011

Ilan Golecki  and
Margaret Eagan
Ilan Golecki
Affiliation:
Phone (973) 455-4938; Fax (973) 455-4339; e-mail: ilan_golecki@ieee.org
Margaret Eagan
Affiliation:
Honeywell International Inc. (formerly AlliedSignal Inc.), Corporate Advanced Materials and Devices Laboratory, 101 Columbia Road, Morristown, NJ 07962.
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Abstract

Rhodium and iridium are refractory metals which possess intrinsically high electrical conductivity, and their chemical inertness enables their use at relatively high temperatures in microelectronics. However, due to the high Young's modulus of these materials, a residual tensile stress of hundreds of MPa is measured in evaporated thin films. New data is presented, demonstrating control over both the magnitude and the sign of the residual stress in such refractory thin films formed by means of ion-beam-enhanced physical vapor deposition on oxidized Si substrates. The electrical resistivity and stress are determined by controlling the substrate temperature, deposition rate and ion beam parameters. Thicker films are achieved in this manner, including films with near-zero residual stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R5.5
Copyright
Copyright © Materials Research Society 2002

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References

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