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Focused Electron Beam Induced Deposition of High Resolution Magnetic Scanning Probe Tips

Published online by Cambridge University Press:  15 March 2011

I. Utke
Affiliation:
Institute of Applied Optics, IOA-DMT-EPFL, CH-1015 Lausanne, Switzerland
F. Cicoira
Affiliation:
Institute of Applied Optics, IOA-DMT-EPFL, CH-1015 Lausanne, Switzerland
G. Jaenchen
Affiliation:
Institute of Applied Optics, IOA-DMT-EPFL, CH-1015 Lausanne, Switzerland
P. Hoffmann
Affiliation:
Institute of Applied Optics, IOA-DMT-EPFL, CH-1015 Lausanne, Switzerland
L. Scandella
Affiliation:
Nanosurf AG, Grammetstr.14, CH-4410 Liestal, Switzerland
B. Dwir
Affiliation:
Institute of Micro- and Optoelectronics, IMO-DP-EPFL, CH-1015 Lausanne, Switzerland
E. Kapon
Affiliation:
Institute of Micro- and Optoelectronics, IMO-DP-EPFL, CH-1015 Lausanne, Switzerland
D. Laub
Affiliation:
Centre Interdepartemental de Microscopie Electronique, CIME-EPFL, CH-1015 Lausanne, Switzerland
Ph. Buffat
Affiliation:
Centre Interdepartemental de Microscopie Electronique, CIME-EPFL, CH-1015 Lausanne, Switzerland
N. Xanthopoulos
Affiliation:
Laboratoire de Metallurgie Chimique, LMCH-DMX-EPFL, CH-1015 Lausanne, Switzerland
H.J. Mathieu
Affiliation:
Laboratoire de Metallurgie Chimique, LMCH-DMX-EPFL, CH-1015 Lausanne, Switzerland
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Abstract

Apexes of commercial pyramidal silicon scanning microscopy tips were magnetically functionalized by means of local focused electron beam induced deposition. High aspect ratio supertips and local tip coatings with varying apex diameters can be produced by varying exposure time, beam current, and scan mode. The carbonyl precursor Co2(CO)8 was used as source of magnetic metal. Tip performance was tested with magnetic force microscopy (tapping / lift-retrace mode) and magnetically actuated cantilever atomic force microscopy. The deposit contains 34±2 at.% Co, dispersed as 2-5 nm metal nanocrystals in a carbonaceous matrix. Specific surface reactions and Boudouard reactions are proposed to explain the resulting deposit composition measured by Auger spectroscopy. The electrical resistivity is 104 higher than bulk Co resistivity.

Type
Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Sun, S., Murray, C. B., Weller, D., Folks, L. and Moser, A., Science 287, 1898 (2000).Google Scholar
2. Schoessler, C., Kaya, A., Kretz, J., Weber, M. and Koops, H. W. P., Microelectron. Engin. 30, 471 (1996).Google Scholar
3. Utke, I., Berger, R., Scandella, L. and Hoffmann, P., Appl. Phys. Lett. (submitted).Google Scholar
4. Hoffmann, P., Utke, I., Cicoira, F., Dwir, B., Leifer, K., Kapon, E. and Doppelt, P., Mat. Res. Soc. Symp. Proc., San Francisco, 171 (2000).Google Scholar
5. Schreckenbach, G., Ziegler, T. and Li, J., Int. J. Quantum Chem. 56, 477 (1995).Google Scholar
6. Huber, K. P. and Herzberg, G., in Molecular Spectra and Molecular Structure, IV. Constants of Diatomic Molecules, (Van Nostrand Reinhold, New York, 1979).Google Scholar
7. Suvanto, S., PhD thesis N° 43, University of Joensuu (1999).Google Scholar
8. Boudouard, O., J. Chem. Soc. 2, 287 (1899).Google Scholar
9. Leiweke, R. J. and Lempert, W. R., 32nd AIAA Plasmadynamics and Lasers Conference, Anaheim, CA, 2936 (2001).Google Scholar
10. Koops, H. W. P., Weiel, R., Kern, D. P. and Baum, T. H., J. Vac. Sci. Technol. B 6, 477 (1988).Google Scholar
11. Hoyle, P. C., Ogasawara, M., Cleaver, J. R. A. and Ahmed, H., Appl. Phys. Lett. 62, 3043 (1993).Google Scholar
12. Hoyle, P. C., Cleaver, J. R. A. and Ahmed, H., Appl. Phys. Lett. 64, 1448 (1994).Google Scholar
13. Weber, M., Koops, H. W. P., Rudolph, M., Kretz, J. and Schmidt, G., J. Vac. Sci. Technol. B 13, 1364 (1995).Google Scholar
14. Kunz, R. R. and Mayer, T. M., J. Vac. Sci. Technol. B 6, 1557 (1988).Google Scholar
15. Scheuer, V., Koops, H. and Tschudi, T., Microelectron. Engin. 5, 423 (1986).Google Scholar
16. Kislov, N. A., Khodos, I. I., Ivanov, E. D. and Barthel, J., Scanning 18, 114 (1996).Google Scholar