Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-24T05:11:56.861Z Has data issue: false hasContentIssue false
  • English
  • Français

Imaging Transfer Devices Operated by PSD Mode a-Si P-I-N Junctions

Published online by Cambridge University Press:  25 February 2011

M. Yamaguchi ,
S. Murakami ,
S. Todo  and
Y. Tawada
M. Yamaguchi
Affiliation:
Central Research Laboratories, Kanegafuchi Chemical Industry Co., Ltd, 2–80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
S. Murakami
Affiliation:
Central Research Laboratories, Kanegafuchi Chemical Industry Co., Ltd, 2–80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
S. Todo
Affiliation:
Central Research Laboratories, Kanegafuchi Chemical Industry Co., Ltd, 2–80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
Y. Tawada
Affiliation:
Central Research Laboratories, Kanegafuchi Chemical Industry Co., Ltd, 2–80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
Get access

Abstract

Two types of position sensitive device (PSD) using a-Si:H thin films have been developed. One has been produced by large area plasma CVD, with usual metal deposition techniques. The other is the application of a linear image sensor as a one dimensional position sensor. There are some advantages and disadvantages in these two types of position sensitive device. Resolution of the linear image sensor is limited by the size of the elements and the pitch; in contrast, uniformity of the electrodes on the p-i-n diode and thickness of the a-Si thin film are the key factors for the resolution of one and two dimensional analogue PSDs.

The analogue PSD is applicable to a digitizer which takes the role of a man-machine (computer) interface. The large area two dimensional digitizer was fabricated using the same technique as large area solar cell production, and was shown to be useful as a drawing tool on a CRT or other display devices with the aid of a micro-computer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 631
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Tawada, Y., Okamoto, H., Hamakawa, Y., Proc. 15th IEEE Photovoltaic Specialist Conf., pp. 245–246, May (1981)Google Scholar
2) Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y. J. Appl. Phys., vol.53, no.7, pp.5273–5281, July (1982)CrossRefGoogle Scholar
3) Nakamura, G., and Yukimoto, Y., Abstracts of SERI/DOE Amolphous Silicon Subcontractors Annual Review Meeting,pp.149–160, March (1985)Google Scholar
4) Fukada, N., Takada, J., Yamaguchi, M., Tsuge, K., and Tawada, Y., Proc. 1st Int. Photovoltaic Sci. & Eng. Conf., pp.229–232, (1984)Google Scholar
5) Takada, J., Yamaguchi, M., Fukada, N., and Tawada, Y., Jpn. J. Appl. Phys., vol.26, pp.889 (1987)CrossRefGoogle Scholar
6) Fukada, N., Hosokawa, Y., Yamaguchi, M., Takada, J., Kondo, M., Nishimura, K, and Tawada, Y., Proc. -11th Int. Conf. on Amorphous and Liquid Semiconductors 5p-15-11 (1985)Google Scholar
7) Inoue, E., and Shimizu, I., Photographic Scienceand Engineering, vol.26 (3), pp.148, (1982)Google Scholar
8) Oda, S., Tomita, H., and Simizu, I., Japan Annual Reviews in ElectronicsComputersand Telecommunications (JARECT), vol.6 (Editor Y. Hamakawa), pp.113, (1983)Google Scholar
9) Sakai, H.,and Uchida, Y., Technical Digest of the International PVSEC-3, Tokyo, Japan, pp.377, (1979)Google Scholar
10) Yamano, M., and Takesada, H., J. Non-Cryst. Solids. 77 & 78 pp.1383, (1985)CrossRefGoogle Scholar
11) Berkel, C. Van, and Powell, M. J., J. Non-Cryst. Solids. 77 & 78 pp.1393, (1985)CrossRefGoogle Scholar
12) Thompson, M. J., Mat. Res. Soc. Proc. 70 pp.613, (1986)CrossRefGoogle Scholar
13) Noorlag, D. J. W., and Middelhock, S., Solid-State and Electron Devices, vol.3, pp.75, (1979)CrossRefGoogle Scholar
14) Woltring, H. J., IEEE Transactions on Electron Devices, August pp.581, (1975)CrossRefGoogle Scholar
15) Niu, H., Aoki, C., Matsuda, T., Takai, M.,and Maeda, M., Jpn. J of Appl. Phys. vol.26, L.35, (1987)CrossRefGoogle Scholar
16) Klein, C. A., and Bierig, R. B., IEEE Transactions on Electron Devices, vol. ed–21 pp.532, (1974)CrossRefGoogle Scholar