Hostname: page-component-7c8c6479df-27gpq Total loading time: 0 Render date: 2024-03-28T18:27:45.479Z Has data issue: false hasContentIssue false

Versatile Metal Oxide Nanowire Devices Achieved via Controlled Doping

Published online by Cambridge University Press:  01 February 2011

Eric Dattoli
Affiliation:
dattoli@umich.edu, University of Michigan, Electrical Engineering and Computer Science, 1301 Beal Ave, Ann Arbor, MI, 48109, United States, 734-764-2547
Qing Wan
Affiliation:
wanqing7686@hotmail.com, University of Michigan, Electrical Engineering and Computer Science, 1301 Beal Ave., Ann Arbor, MI, 48109, United States
Wei Lu
Affiliation:
wluee@umich.edu, University of Michigan, Electrical Engineering and Computer Science, 1301 Beal Ave., Ann Arbor, MI, 48109, United States
Get access

Abstract

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nanowires. Uniform device performance was obtained using an in situ doping method, with average field-effect mobilities exceeding 100 cm2/(V•s). Prototype fully-transparent TFT devices on glass substrates showed excellent performance metrics in terms of transconductance and on/off ratio. The combined advantages of SnO2 nanowires: namely a low cost growth process, high electron mobility, and optical transparency; make the system well suited for large-scale transparent electronics on low-temperature substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lu, W. and Lieber, C.M., Semiconductor nanowires. Journal of Physics D-Applied Physics, 2006. 39(21): p. R387–R406.Google Scholar
2. Wan, Q. et al. , High-Performance Transparent Conducting Oxide Nanowires. Nano Letters, 2006. 6(12): p. 29092915.Google Scholar
3. Wan, Q., Dattoli, E.N., and Lu, W.. Transparent Metallic Sb-doped SnO2 Nanowires in submitted. 2007.Google Scholar
4. Duan, X.F. et al. , High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature, 2003. 425(6955): p. 274278.Google Scholar
5. Wan, Q. et al. , Room-temperature hydrogen storage characteristics of ZnO nanowires. Applied Physics Letters, 2004. 84(1): p. 124126.Google Scholar
6. Javey, A. et al. , Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics. Nano Letters, 2007. 7(3): p. 773777.Google Scholar
7. Hernandez-Ramirez, F. et al. , Fabrication and electrical characterization of circuits based on individual tin oxide nanowires. Nanotechnology, 2006. 17(22): p. 55775583.Google Scholar
8. Goldberger, J. et al. , ZnO nanowire transistors. Journal of Physical Chemistry B, 2005. 109(1): p. 914.Google Scholar
9. Keem, K. et al. , Fabrication and Device Characterization of Omega-Shaped-Gate ZnO Nanowire Field-Effect Transistors. Nano Letters, 2006. 6(7): p. 14541458.Google Scholar
10. Xiang, J. et al. , Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature, 2006. 441(7092): p. 489493.Google Scholar
11. Wind, S.J. et al. , Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes. Applied Physics Letters, 2002. 80(20): p. 38173819.Google Scholar