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Selective-Area Growth of Metal Oxide Films Induced by Patterned Excimer Laser Surface Photolysis

Published online by Cambridge University Press:  25 February 2011

R. R. Kunz ,
D. J. Ehrlich ,
J. Melngailis  and
M. W. Horn
R. R. Kunz
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
D. J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
J. Melngailis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
M. W. Horn
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

An excimer-laser-based method for achieving selective-area oxide growth on polymer surfaces is described. This method uses high photon energy (6.4 eV, 7.9 eV) excimer laser irradiation to change hydrophobic surfaces (surface tension <20 erg/cm2) into hydrophilic surfaces. The hydrophobic growth surfaces are prepared by exposure of a polymer to halogen-containing plasmas. Selective growth is done by simultaneously exposing patterned, laser-modified surfaces to SiC14 and H2O; the reaction takes place only where the H2O adsorbs to form a condensed adlayer. After selective growth, oxygen etching of the polymer results in the desired resist pattern. When used with a plasma-deposited carbon polymer, the result is a new all-dry lithographic process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 105
Copyright
Copyright © Materials Research Society 1992

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