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NMOS Dynamic Shift Registers in CO2 Laser-Crystallized Silicon Thin-Films on Fused Quartz

Published online by Cambridge University Press:  21 February 2011

Anne Chiang ,
Mark H. Zarzycki ,
William P. Meuli  and
Noble M. Johnson
Anne Chiang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Mark H. Zarzycki
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
William P. Meuli
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Noble M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

High-speed NMOS depletion-load ring oscillators and dynamic shift registers have been fabricated from laser-crystallized silicon thin-film transistors (TFT's) on fused quartz. We report on optimization of circuit fabrication process involving ion implantation and high temperature cycles to achieve inverter gains, logic thresholds, and input noise margins appropriate for logic operation. Characteristics of discrete devices are also used to evaluate a process simulator and a device simulator as tools for future designs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 119
Copyright
Copyright © Materials Research Society 1984

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References

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