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Laser Cvd of Tungsten on Silicon Oxynitride

Published online by Cambridge University Press:  25 February 2011

R. Izquierdo ,
A. Lecours  and
M. Meunier
R. Izquierdo
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7
A. Lecours
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7
M. Meunier
Affiliation:
Groupe des Couches Minces and Département de Génie Physique, Ecole Polytechnique de Montréal, Québec, Canada, H3C 3A7
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Abstract

Laser direct writing of tungsten from WF6 onto 0.6 μm thick films of silicon oxynitride on silicon using an argon-ion laser beam is investigated. XPS studies show that WF6 is chemisorbed on the oxynitride surface and that nitrogen plays a role in this adsorption. Deposits have good adhesion, columnar growth structure and resistivities ranging from 13 to 25 μΩ-cm. The deposition conditions significantly affect the deposit morphology and profile. In particular, increasing the hydrogen pressure increases the linewidth but reduces the thickness. Mass transport phenomena are invoked to explain these effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 111
Copyright
Copyright © Materials Research Society 1992

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References

1. Black, J.G., Ehrlich, D.J., Rothschild, M., Doran, S.P., Sedlacek, J.H.C., J. Vac. Sci. Tech. B5, 419 (1987).Google Scholar
2. Black, J.G., Doran, S.P., Rothschild, M. and Ehrlich, D.J., Appl. Phys. Lett. 50, 1016 (1987).Google Scholar
3. Liu, Y.S., Tungsten and Other Refractory Metals for VLSI Applications, Proc. of the 1984-85 Workshops, MRS, p.43 (1986).Google Scholar
4. Liu, Y.S., Yakymyshyn, C.P., Philipp, H.R., Cole, H.S., Levinson, L.M., J. Vac. Sci. Tech. B3, 1441 (1985).Google Scholar
5. Lin, J.Y. and Allen, S.D., Mat. Res. Soc. Symp. 158, 85 (1990).Google Scholar
6. Park, Y.W., Park, C.O. and Chun, J.S., Thin Solid Films 201, 167 (1991).Google Scholar
7. Pauleau, Y., Thin Solid Films 122, 243 (1984).Google Scholar
8. Kodas, T. T., Baum, T.H. and Comita, P.B., J. Appl. Phys. 2, 283 (1987).Google Scholar
9. Tonneau, D., Auvert, G., and Pauleau, Y., J. Appl. Phys. B4, 5189 (1988).Google Scholar