Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-18T23:52:59.594Z Has data issue: false hasContentIssue false
  • English
  • Français

μm-Scale Lateral Growth of Ga-Monolayers Observed In-Situ by Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

J. Osaka  and
N. Inoue
J. Osaka
Affiliation:
NTT LSI laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, 243-O1, Japan
N. Inoue
Affiliation:
NTT LSI laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, 243-O1, Japan
Get access

Abstract

An ultra high vacuum scanning electron microscope equipped to an MBE system is utilized to study a transient of a surface atomic structure during MBE growth of GaAs and AlGaAs by the alternate supply method. Lateral growth of a Ga-monolayer over microns is realized utilizing Ga droplets. This is confirmed by discriminating the Ga and As top layer by using the secondary electron intensity difference between the Ga and As top layer. The growth mechanism of the Ga monolayer is discussed based on the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 33
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamada, K., Inoue, N., Osaka, J. and Wada, K., presented at the 5th International Conference on Molecular Beam Epitaxy, Sapporo, 1988 (unpublished).Google Scholar
2. Inoue, N. and Osaka, J., in Technical Digest of 1st Int. Meeting Advanced Processing & Characterization Technologies, Tokyo, 1989, p. 9.Google Scholar
3. Osaka, J., Inoue, N., Mada, Y., Yamada, K. and Wada, K., in Proceedings ICCG-9, Sendai, 1989 (to be published in J. Crystal Growth)Google Scholar
4. Neave, J. H., Joyce, B. A., Dobson, P. J. and Norton, N., Appl. Phys. A 31, 1 (1983)Google Scholar
5. Neave, J. H., Joyce, B. A. and Dobson, P. J., Appl. Phys. A 34, 179 (1984)Google Scholar
6. Tanaka, M., PhD thesis, University of Tokyo, 1988.Google Scholar