Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-18T17:25:58.664Z Has data issue: false hasContentIssue false

Synthesis of Vertically Aligned Carbon Nanofiber Films by RF Magnetron Sputtering

Published online by Cambridge University Press:  21 March 2011

K. -Y. Lee
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
K. Fujimoto
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
S. Ohkura
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
S. Honda
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
M. Katayama
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
T. Hirao
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
K. Oura
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565–0871, Japan
Get access

Abstract

The aligned carbon nanofibers were synthesized on Si substrates using RF magnetron sputtering with a hot filament. The hot filament was made of tungsten wire and its temperature was up to 2000°C during the deposition. Nitrogen was used as the sputter gas at a relatively low pressure of 2×10-2 Torr. The sputtering deposition was carried out at a substrate temperature of 700°C. The nanofibers were grown vertically on the substrates. The diameters and the density of the fibers were about 30–45 nm and 109 cm-2, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Iijima, S., Nature 354, 56 (1991).Google Scholar
2. Avigal, Y., Kalish, R., Appl. Phys. Lett. 78, 2291 (2001).Google Scholar
3. Sohn, J. I., Lee, S., Song, Y.-H., Choi, S.-Y., Cho, K.-I., Nam, K.-S., Appl. Phys. Lett. 78, 901 (2001).Google Scholar
4. Li, D.-C., Dai, L., Huang, S., Mau, A. W. H., Wang, Z. L., Chem. Phys. Lett. 316, 349 (2000).Google Scholar
5. Bower, C., Zhu, W., Jin, S., Zhou, O., Appl. Phys. Lett. 77, 830 (2000).Google Scholar
6. Huang, Z. P., Xu, J. W., Ren, Z. F., Wang, J. H., Siegal, M. P., Provencio, P. N., Appl. Phys. Lett. 73, 3845 (1998).Google Scholar
7. Murakami, H., Hirakawa, M., Tanaka, C., Yamakawa, H., Appl. Phys. Lett. 76, 1776 (2000).Google Scholar
8. Obraztsov, A. N., Pavlovsky, I., Volkov, A. P., Obraztsova, E. D., Chuvilin, A. L., Kuznetsov, V. L., J. Vac. Sci. Technol. B 18, 1059 (2000).Google Scholar
9. Chen, Y., Patel, S., Ye, Y., Shaw, D. T., Guo, L., Appl. Phys. Lett. 73, 2119 (1998).Google Scholar
10. Chen, Y., Shaw, D. T., Guo, L., Appl. Phys. Lett. 76, 2119 (1998).Google Scholar
11. Cao, A., Ci, L., Li, D., Wei, B., Xu, C., Liang, J., Wu, D., Chem. Phys. Lett. 335, 150 (2001).Google Scholar