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Performance of SiC Microwave Transistors in Power Amplifiers

Published online by Cambridge University Press:  01 February 2011

Sher Azam ,
R. Jonsson ,
E. Janzen  and
Q. Wahab
Sher Azam
Affiliation:
sher@ifm.liu.se, Linköping Unversity
R. Jonsson
Affiliation:
roljon@foi.se, Swedish Defence Research Agency (FOI), Linkaoping, 58111, Sweden
E. Janzen
Affiliation:
erija@ifm.liu.se, Linkaoping University, Department of Physics, Chemistry and Biology (IFM), Linkaoping, 58183, Sweden
Q. Wahab
Affiliation:
quamar@ifm.liu.se, Linkaoping University, Department of Physics, Chemistry and Biology (IFM), Linkaoping, 58183, Sweden
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Abstract

The performance of SiC microwave power transistors is studied in fabricated class-AB power amplifiers and class-C switching power amplifier using physical structure of an enhanced version of previously fabricated and tested SiC MESFET. The results for pulse input in class-C at 1 GHz are; efficiency of 71.4 %, power density of 1.0 W/mm. The switching loss was 0.424 W/mm. The results for two class-AB power amplifiers are; the 30-100 MHz amplifier showed 45.6 dBm (∼ 36 W) output powers at P1dB, at 50 MHz. The power added efficiency (PAE) is 48 % together with 21 dB of power gain. The maximum output power at P1dB at 60 V drain bias and Vg= -8.5 V was 46.7 dBm (∼47 W). The typical results obtained in 200-500 MHz amplifier are; at 60 V drain bias the P1dB is 43.85 dBm (24 W) except at 300 MHz where only 41.8 dBm was obtained. The maximum out put power was 44.15 dBm (26 W) at 500 MHz corresponding to a power density of 5.2 W/mm. The PAE @ P1dB [%] at 500 MHz is 66 %.

Keywords

deviceselectrical propertiessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D10-05
Copyright
Copyright © Materials Research Society 2008

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References

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