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Thermal Stability of Fluorinated SiO2 Films: Effects of Hydration and Film-Substrate Interaction

Published online by Cambridge University Press:  15 February 2011

J. P. Sullivan ,
D. R. Denison ,
J. C. Barbour ,
P. P. Newcomer ,
C. A. Apblett ,
C. H. Seager  and
A. G. Baca
J. P. Sullivan
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
D. R. Denison
Affiliation:
Lam Research Corp., Fremont, CA 94538–7394
J. C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
P. P. Newcomer
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. A. Apblett
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
A. G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

The thermal stability of fluorinated SiO2 films (SiOF) was found to be dependent on F content and the type of substrate upon which the film was deposited. SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance (ECR) plasma upon Si, Al/Si, TiN/Al/Si, and Al/SiO2/Si substrates. Following deposition, the films were deliberately hydrated and/or annealed and their stability assessed. Hydration was found to only affect the high F content films. Capacitance changes with annealing in the high F content films were found to occur beginning at 200°C. These changes, which were independent of substrate type, likely occurred due to desorption of H2O in the films. After annealing of the high F content films up to 400°C, a reduction in F content was found for SiOF films on some substrates. Significant reductions were found for SiOF films on Al/Si substrates, while little or no change was found for films on TiN/Al/Si, Al/SiO2/Si, or Si substrates. Local chemical analysis of those films which showed F reduction indicated that the F profile was approximately uniform throughout the layer and did not pile-up at the interface. The substrate-dependent thermal instability exhibited by these films suggests the chemical nature or qualities of the substrate may play a role in the F reduction reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 149
Copyright
Copyright © Materials Research Society 1997

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