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Diffusion-Induced Precipitation in Arsenosilicate Glass (AsSG)

Published online by Cambridge University Press:  22 February 2011

Radhika Srinivasan ,
Tue Nguyen ,
Herbert L. Ho  and
Tai D. Nguyen
Radhika Srinivasan
Affiliation:
IBM Microelectronics, Hopewell Jct., NY 12533
Tue Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc., Camas, WA 98607
Herbert L. Ho
Affiliation:
IBM Microelectronics, Hopewell Jct., NY 12533
Tai D. Nguyen
Affiliation:
Center for X-ray Optics, Lawrence Berkeley Laboratory, Berkeley, CA 94720
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Abstract

Diffusion-induced precipitation in arsenosilicate glass (AsSG) under high temperature anneal is studied by high resolution Transmission Electron Microscopy (TEM), and other techniques. Polycrystalline precipitates of a few hundred angstroms in size have been observed near the interface of AsSG and the silicon substrate, covering the entire interface area after high temperature anneal. It is proposed that high concentrations of arsenic (above the solid solubility limit) precipitate initially at nucleation sites near the AsSG/silicon interface. Further anneal-induced diffusion of arsenic to the interface promotes growth of the precipitates. As a result, the precipitates cover the entire interface area, and impede further As diffusion into the Si substrate. Techniques to avoid the precipitation process without compromising the thermal budget or reduced arsenic diffusion have been explored and will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 83
Copyright
Copyright © Materials Research Society 1994

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References

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