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III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

Published online by Cambridge University Press:  10 February 2011

Kazuo Uchida ,
Hiroki Tokunaga ,
Yoshiaki Inaishi ,
Nakao Akutsu ,
Koh Matsumoto ,
Tsuyoshi Itoh ,
Takashi Egawa ,
Takashi Jimbo  and
Masayoshi Umeno
Kazuo Uchida
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Hiroki Tokunaga
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Yoshiaki Inaishi
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Nakao Akutsu
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Koh Matsumoto
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukubo, Ibaraki, 300–26, Japan
Tsuyoshi Itoh
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
Takashi Egawa
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
Takashi Jimbo
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
Masayoshi Umeno
Affiliation:
Deaprtment of Electrical & Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya, Aichi, 466, Japan
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Abstract

We introduce III-V nitrides growth including GaN as well as InGaN by a newly developed atmospheric-pressure metal-organic vapor phase epitaxy system with a three layered flow channel which is a promising system for a large scale production. First, we have shown through computer simulation that a laminar flow of gases is maintained at 1000 °C in the three layered flow channel. Second, as a part of epitaxial results, we have found that the surface roughness of a low temperature-grown buffer layer on sapphire substrates, which can be measured by atomic force microscope, should be minimum in order to grow high quality GaN. We also report the growth of a double heterostructure of Ino. 15Gao.85N/GaN which shows a strong near band-edge emission in room temperature photoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 129
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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