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Advanced ELID Process Development for Grinding Silicon Wafers

Published online by Cambridge University Press:  01 February 2011

M. M. Islam ,
A. Senthil Kumar ,
S. Balakumar ,
H. S. Lim  and
M. Rahman
M. M. Islam
Affiliation:
National University of Singapore, Singapore 119260
A. Senthil Kumar
Affiliation:
National University of Singapore, Singapore 119260
S. Balakumar
Affiliation:
Institute of Microelectronics, 11, Science Park Road, Science Park-II, Singapore 117685
H. S. Lim
Affiliation:
National University of Singapore, Singapore 119260
M. Rahman
Affiliation:
National University of Singapore, Singapore 119260
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Abstract

A completely new and novel electrolytic system, Injection Electrode (IE) assisted electrolysis, has been tried here to improve the quality of the silicon wafer surfaces generated by Electrolytic In-process Dressing (ELID) grinding process. The Experiments were conducted by varying the injection flow rate in order to perform extensive analysis on the effect of injection flow rate on the generated wheel surface condition and the consequent grinding performance. Experimental results showed that lower injection flow rate greatly improved the wheel surface condition resulting in superior ground surface qualities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W9.2
Copyright
Copyright © Materials Research Society 2005

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References

[1] Venkatesh, V. C., Inasaki, I., Toenshof, H. K., Nakagawa, T., Marinescu, I. D., “Observations on Polishing and Ultraprecision Machining of Semiconductor Substrate Materials,” Annals of the CIRP, Manufacturing Technology, 44/2/1995, pp. 611–618.Google Scholar
[2] Ohmori, H., Nakagawa, T., “Mirror Surface Grinding of Silicon Wafers with Electrolytic Inprocess Dressing,” Annals of the CIRP, Manufacturing Technology, 39/1/1990, pp. 329–333.Google Scholar
[3] Lim, H. S., Fathima, K., Kumar, A. Senthil, Rahman, M., ‘A Fundamental Study on the Mechanism of Electrolytic In-process Dressing (ELID) Grinding,” International Journal of Machine Tools and Manufacture, Vol. 42, pp. 935–943, 2002.Google Scholar
[4] Lee, Eun-Sang, Kim, Jeong-Du, “A Study on the Analysis of Grinding Mechanism and Development of Dressing System by Using Optimum In-process Electrolytic Dressing,” International Journal of Machine Tools Manufacture, Vol. 37, No. 12, pp. 1673–1689, 1997 Google Scholar