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C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

Published online by Cambridge University Press:  22 February 2011

S. Subramanian ,
B. M. Arora ,
A. K. Srivastava ,
S. Banerjee  and
G. Fernandes
S. Subramanian
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
B. M. Arora
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
A. K. Srivastava
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
S. Banerjee
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
G. Fernandes
Affiliation:
Tata Institute of Fundamental Research, Bombay, India
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Abstract

In this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 115
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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